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pro vyhledávání: '"M. Schoisswohl"'
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Autor:
M. V. Stepikhova, J. L. Cantin, Hans Jürgen von Bardeleben, M. Schoisswohl, G. Kocher, W. Jantsch
Publikováno v:
Materials Science Forum. :1533-1538
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df11344ef402f4f9797ab691b188bab3
https://doi.org/10.4028/www.scientific.net/msf.258-263.1533
https://doi.org/10.4028/www.scientific.net/msf.258-263.1533
Publikováno v:
Thin Solid Films. 297:233-236
A structural study of p- and p+-type porous Si1−xGex materials and a comparison with non-porous epitaxial Si1−xGex layers is reported. The pore morphology is studied by electron microscopy and compared to that of porous silicon. It is shown that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5fdcef92ecbda8e9775d9ad0cc8ef94
https://doi.org/10.1016/s0040-6090(96)09367-4
https://doi.org/10.1016/s0040-6090(96)09367-4
Publikováno v:
Thin Solid Films. 294:242-245
Si 0.8 Ge 0.2 /Si 0.8 Ge 0.2 O 2 interface defects were studied by the electron paramagnetic resonance (EPR) technique in 1 μm thick epitaxial porous SiGe layers. Two different intrinsic interface defects, the silicon and germanium P b centers, have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1af0b757a52e6251bb247f3bb8b2abd6
https://doi.org/10.1016/s0040-6090(96)09244-9
https://doi.org/10.1016/s0040-6090(96)09244-9
Publikováno v:
Colloids and Surfaces A: Physicochemical and Engineering Aspects. 115:277-289
Point defects in bulk Si have been studied for over thirty years and a very detailed understanding of their microscopic structure and electronic properties has been achieved. The recent development of porous Si has allowed a further advancement in Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9071d01cf5c11b3aeb17e442c0a0d692
https://doi.org/10.1016/0927-7757(96)03604-7
https://doi.org/10.1016/0927-7757(96)03604-7
Publikováno v:
Surface Science. :793-796
In comparison with oxidized bulk crystals, we show that the morphology of oxidized porous silicon can offer a unique opportunity of measuring suboxide distribution by conventional XPS and to characterize thoroughly interfacial defects by EPR.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceba57b603ccb9733e36cba553f20f50
https://doi.org/10.1016/0039-6028(95)01230-3
https://doi.org/10.1016/0039-6028(95)01230-3
Autor:
Maria Chamarro, T. Morgenstern, Eberhard Bugiel, J. L. Cantin, W. Kissinger, R. C. Andreu, M. Schoisswohl, H. J. von Bardeleben
Publikováno v:
Thin Solid Films. 276:92-95
We prepared porous SiGe layers by anodic etching from epitaxial SiGe layers of 5 and 20% Ge content and of two different doping concentrations (p, p+). Their morphology was investigated by electron microscopy and electron paramagnetic resonance. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::475103581a991f6cce9090c15e210dc9
https://doi.org/10.1016/0040-6090(95)08051-1
https://doi.org/10.1016/0040-6090(95)08051-1
Autor:
M. Schoisswohl, H.J von Berdeleben, János Erostyák, A. Grosman, Eva Vazsonyi, G Jalsovszky, J. L. Cantin, S. Lebib, C. Ortega
Publikováno v:
Thin Solid Films. 276:76-79
The transformations induced by the anodic oxidation process on the pore structure and surface states of p-type and p+-type porous silicon have been studied by Rutherford backscattering spectroscopy, local vibrational mode and electron paramagnetic re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4df4746556c90d94ced7148a462b5eef
https://doi.org/10.1016/0040-6090(95)08088-0
https://doi.org/10.1016/0040-6090(95)08088-0
Publikováno v:
Physical Review B. 52:R11599-R11602
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e3db5992a1b5c0b484a85894efcdf21
https://doi.org/10.1103/physrevb.52.r11599
https://doi.org/10.1103/physrevb.52.r11599
Autor:
J. L. Cantin, Maria Chamarro, M. Schoisswohl, W. Kissinger, H. J. von Bardeleben, R. C. Andreu, T. Morgenstern, Eberhard Bugiel
Publikováno v:
Physical Review B. 52:11898-11903
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaa2057b26c9b106d14000efa06674cc
https://doi.org/10.1103/physrevb.52.11898
https://doi.org/10.1103/physrevb.52.11898