Zobrazeno 1 - 10
of 104
pro vyhledávání: '"M. Schnarrenberger"'
Autor:
Ekhuya, Noella Andenyi1,2 (AUTHOR), Onyango, Mary Abukutsa1 (AUTHOR), Senkler, Jennifer3 (AUTHOR), Winkelmann, Traud2 (AUTHOR), Bündig, Christin2 (AUTHOR) buendig@baum.uni-hannover.de
Publikováno v:
Scientific Reports. 12/16/2024, Vol. 14 Issue 1, p1-14. 14p.
Autor:
Jochen Kreißl, Karsten Voigt, Lars Zimmermann, Klaus Petermann, Jürgen Bruns, Martina Krieg, Thorsten Hartwich, M. Schnarrenberger, T. Mitze, Klemens Janiak
Publikováno v:
AEU - International Journal of Electronics and Communications. 61:158-162
Der Beitrag stellt eine SOI-basierte Technologie zur Herstellung von optischen Leiterplatten vor, bei der mit Hilfe der Hybrid-Integration Silizium und InP auf einer Leiterplatte verbunden werden. Das Konzept wird zunächst vorgestellt und anhand von
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b619ccb396e3e7e162f08b4382dc21a2
https://doi.org/10.1016/j.aeue.2006.12.005
https://doi.org/10.1016/j.aeue.2006.12.005
Autor:
M. Schnarrenberger, T. Mitze, J. Bruns, H. Heidrich, Klaus Petermann, F. Fidorra, Lars Zimmermann, K. Janiak, J. Kreissl, S. Fidorra
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 12:983-987
A simple concept for hybrid integration and packaging of III/V active devices in a multipurpose optical platform is introduced. The board could be used as a coarse wavelength-division multiplexing transmitter with four lasers or as a receiver with ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bf5b77bf81e4f5c7dc2772c70eb689f
https://doi.org/10.1109/jstqe.2006.882643
https://doi.org/10.1109/jstqe.2006.882643
Publikováno v:
2007 9th International Conference on Transparent Optical Networks.
An optical board technology consisting of SOI (silicon-on-insulator) based rib-waveguides and hybrid integration of active III/V components is presented. The use of SOI as the material base for an optical motherboard offers specific advantages, such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0845219292dadb947996188fded8a11
https://doi.org/10.1109/icton.2007.4296061
https://doi.org/10.1109/icton.2007.4296061
Publikováno v:
3rd IEEE International Conference on Group IV Photonics, 2006..
Black-silicon regions are defined on an SOI board and covered with an adhesion layer. The contacts of to be mounted devices are pushed towards these regions, to establish a mechanical, electrical, and thermal contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::882714055f0e7f6da08ddb611afc739e
https://doi.org/10.1109/group4.2006.1708209
https://doi.org/10.1109/group4.2006.1708209
Autor:
J. Kreissl, J. Bruns, K. Janiak, Lars Zimmermann, T. Mitze, M. Schnarrenberger, M. Krieg, Klaus Petermann, T. Hartwich
Publikováno v:
3rd IEEE International Conference on Group IV Photonics, 2006..
A CWDM transmitter board based on SOI is demonstrated. Active III/V components are integrated using Au/Sn solder technology and passive alignment. Precise mounting of lasers on the board is necessary to ensure low coupling losses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28316e0ab1dbc87d605dfad3b892ef1b
https://doi.org/10.1109/group4.2006.1708163
https://doi.org/10.1109/group4.2006.1708163
We have fabricated an MZI with more than 20 dB extinction ratio on SOI serving for the high demands of differential phase shift keying (DPSK) receivers with the capability of fast thermo-optic tuneability.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26fe3ed4c588bd5a3588fbc7330877ae
https://zenodo.org/record/1269167
https://zenodo.org/record/1269167
Autor:
S. Fidorra, F. Fidorra, J. Bruns, Klaus Petermann, J. Kreissl, Lars Zimmermann, T. Mitze, M. Schnarrenberger, K. Janiak, H. Heidrich
A multipurpose optical platform in SOI technology is presented. Hybrid integration of the active devices is realised by AuSn solder technology. The device adjustment by passive self-alignment is in the 1/spl mu/m tolerance range.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4557703b61c93a10b7fe4b66e2236082
https://zenodo.org/record/1269215
https://zenodo.org/record/1269215
Publikováno v:
Proceedings of 2005 IEEE/LEOS Workshop on Fibres and Optical Passive Components, 2005..
In our study we compare the quality of dry etched rip waveguide facets to facets prepared by a conventional polishing technique. Linear SOI waveguide arrays were fabricated on BESOI (bonded and etched-back SOI) material with a silicon top-layer of H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a679c852a0e727c59f0f99987c089736
https://doi.org/10.1109/wfopc.2005.1462136
https://doi.org/10.1109/wfopc.2005.1462136
Publikováno v:
2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915).
We compared two different techniques of facet preparation of silicon-on-insulator (SOI) waveguides: The conventional by dicing and polishing and our proposed by dry etching the facets and cleaving along anisotropically etched cleaving grooves.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74a1f6513ba0e1a14a3214003ddad980
https://doi.org/10.1109/group4.2004.1416657
https://doi.org/10.1109/group4.2004.1416657