Výsledky vyhledávání - "M. Schafberger"

AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation

Autor: M.A. Poisson, C. Drexler, Peter Olbrich, J. Karch, Christophe Gaquiere, Sylvain Delage, Grzegorz Cywiński, Dominique Coquillat, Sergey Ganichev, Guillaume Ducournau, Wojciech Knap, Nina Dyakonova, M. Schafberger, Czeslaw Skierbiszewski, Dmytro B. But

Publikováno v: Opto-Electronics Review
Opto-Electronics Review, Springer Verlag, 2015, 23 (3), pp.195-199. ⟨10.1515/oere-2015-0026⟩
Opto-Electronics Review, 2015, 23 (3), pp.195-199. ⟨10.1515/oere-2015-0026⟩

We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm2. The dynamic range

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0347f09fced0005fe7b392292f229230
https://doi.org/10.1515/oere-2015-0026

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Field effect transistor as detector of THz radiation helicity

Autor: J. Karch, Wojciech Knap, N. Dyakonova, C. Drexler, Sergey Ganichev, M. Schafberger, Peter Olbrich, Yu. A. Mityagin, Michel Dyakonov, Frederic Teppe, Dmytro B. But, K. S. Romanov, Oleg A. Klimenko

Publikováno v: Proceedings of SPIE
TERAHERTZ EMITTERS, RECEIVERS, AND APPLICATIONS IV
TERAHERTZ EMITTERS, RECEIVERS, AND APPLICATIONS IV, Aug 2013, San-Diego, United States. pp.88460N, ⟨10.1117/12.2022264⟩

International audience; We use two antenna model to develop a theory of the recently observed helicity-sensitive detection of terahertz radiation by FETs. The effect is due to the mixing of the ac signals produced in the channel by the two antennas.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::865d1d8fa63196923d08009cf2918517
https://doi.org/10.1117/12.2022264

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Helicity sensitive terahertz radiation detection by field effect transistors

Autor: Y. M. Meziani, Masha Lifshits, J. Karch, Yuri Mityagin, Peter Olbrich, Wojciech Knap, O. Klimenko, Nina Dyakonova, C. Drexler, Frederic Teppe, Sergey Ganichev, M. Schafberger, Krzysztof Karpierz

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2012, 111 (12), pp.124504. ⟨10.1063/1.4729043⟩

Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (ge

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8119f697548793ef3e1263051672e15e

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Detection of high power THz radiation by GaAs High Electron Mobility and Si Field Effect Transistors

Autor: Sergey Ganichev, Krzysztof Karpierz, Wojciech Knap, Yahya Moubarak Meziani, Peter Olbrich, C. Drexler, Nina Dyakonova, H. Videlier, J. Karch, M. Schafberger

Publikováno v: 35th International Conference on Infrared, Millimeter, and Terahertz Waves.

We report on the observation of photocurrents in GaAs High Electron Mobility and Si Field Effect Transistors. We show that illuminating the samples with high power terahertz laser radiation causes electric currents. These currents are driven by plasm

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::498aab1bca2cb83f349c1532e3dd7f42
https://doi.org/10.1109/icimw.2010.5613001

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