Zobrazeno 1 - 10
of 181
pro vyhledávání: '"M. Schaekers"'
Autor:
C. Porret, J.-L. Everaert, M. Schaekers, L.-A. Ragnarsson, A. Hikavyy, E. Rosseel, G. Rengo, R. Loo, R. Khazaka, M. Givens, X. Piao, S. Mertens, N. Heylen, H. Mertens, C. Toledo De Carvalho Cavalcante, G. Sterckx, S. Brus, A. Nalin Mehta, M. Korytov, D. Batuk, P. Favia, R. Langer, G. Pourtois, J. Swerts, E. Dentoni Litta, N. Horiguchi
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78086ce8edcc5c3d4eede696a5240455
https://doi.org/10.1109/iedm45625.2022.10019501
https://doi.org/10.1109/iedm45625.2022.10019501
Autor:
C. Porret, Y.H. Huang, G. Rengo, H. Yu, M. Schaekers, J.-L. Everaert, M. Heyns, A. Vohra, A. Hikavyy, E. Rosseel, R. Langer, R. Loo
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5e52b56e33ddc6c541446e6961f5bdd
https://doi.org/10.7567/ssdm.2019.n-5-04
https://doi.org/10.7567/ssdm.2019.n-5-04
Autor:
Hiroaki Takahashi, M. Schaekers, Herbert Struyf, Martine Claes, Paul Mertens, Antoine Pacco, Anabela Veloso, Farid Sebaai, Stefan De Gendt
Publikováno v:
Solid State Phenomena. 195:13-16
The industry has diverged into two main approaches for high-k and metal gate (HKMG) integration. One is the so called gate-first. The other is gate-last, also called replacement metal gate (RMG) where the gate electrode is deposited after junctions f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c920ebdc5873e29fbf0ae77c21854aa9
https://doi.org/10.4028/www.scientific.net/ssp.195.13
https://doi.org/10.4028/www.scientific.net/ssp.195.13
Autor:
Dennis Lin, X. Zhou, Jerome Mitard, Quentin Smets, S. Ramesh, Anne S. Verhulst, Ts. Ivanov, Niamh Waldron, S. Sioncke, Hiroaki Arimura, M. Schaekers, Nadine Collaert, Jacopo Franco, Rita Rooyackers, A. Sibaya-Hernandez, Anne Vandooren, Liesbeth Witters, A. Vais, A. Alian, G. Boccardi, Geert Eneman, Devin Verreck, Anabela Veloso, Hao Yu, A. Walke, Aaron Thean
Publikováno v:
ICICDT
In this work, we will review the current progress in high mobility devices and new device architectures. With main focus on (Si)Ge for pMOS and In(Ga)As for nMOS, the benefits and challenges of integrating these materials on a Si platform will be dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7804a62606acaa9ece2516ce72b3f82
https://doi.org/10.1109/icicdt.2016.7542050
https://doi.org/10.1109/icicdt.2016.7542050
Autor:
M. A. Pawlak, Mihaela Popovici, Minsoo Kim, Jorge A. Kittl, Annelies Delabie, Johan Swerts, Karl Opsomer, L. Altimime, M.M. Salimullah, M. Schaekers, B. Kaczer, K. Tomida, Ingrid Debusschere, Sven Van Elshocht, Christa Vrancken
Publikováno v:
ECS Transactions. 41:41-51
A comparative study of the growth behavior of nm-thin ruthenium layers by plasma enhanced atomic layer deposition using two ruthenium precursors is discussed. For bis(ethylcyclopentadienyl)-ruthenium or Ru(EtCp)2, we have found a large incubation tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29bfe51bb3ba6181ef27959ec14304aa
https://doi.org/10.1149/1.3633653
https://doi.org/10.1149/1.3633653
Autor:
Jorge A. Kittl, Wouter Polspoel, M. Schaekers, Tom E. Blomberg, Johannes Meersschaut, Aude Rothschild, J.W. Maes, Paola Favia, Mihaela Popovici, Hugo Bender, Ben Kaczer, Karl Opsomer, Christoph Adelmann, Bogdan Govoreanu, Robin Degraeve, Werner Knaepen, N. Menou, Pamela René Fischer, Wilfried Vandervorst, Valery V. Afanas'ev, A. Franquet, Dieter Pierreux, T. Conrad, Dirk Wouters, S. Van Elshocht, Malgorzata Jurczak, J. Swerts, Mohammed Zahid, K. Tomida, Geoffrey Pourtois, Christophe Detavernier, X.P. Wang, Sergiu Clima, D. Manger, Annelies Delabie, Bert Brijs, J. Van Houdt, M. A. Pawlak
Publikováno v:
ECS Transactions. 19:29-40
The requirements and development of high-k dielectric films for application in storage cells of future generation flash and Dynamic Random Access Memory (DRAM) devices are reviewed. Dielectrics with k-value in the 9-30 range are studied as insulators
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26776181d9cfeddefe58078b346e7a09
https://doi.org/10.1149/1.3118928
https://doi.org/10.1149/1.3118928
Autor:
Sven Van Elshocht, Xiaoping Shi, Jean-Luc Everaert, M. Schaekers, L. Date, A. Rothschild, Erik Rosseel, Shreyas Kher
Publikováno v:
ECS Transactions. 3:417-424
This paper reports on the development of a 300mm MOCVD HfSiOx process. Alkylamido Hf and Si are used as precursors for HfSiOx deposition. A Design of Experiments (DOE) approach is applied to explore the effects of the precursor ratio and deposition p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3cf6e4ecbd635a0bc1443611ce8cf8b
https://doi.org/10.1149/1.2355730
https://doi.org/10.1149/1.2355730
Autor:
Mihaela Popovici, S. Van Elshocht, J. Swerts, Annelies Delabie, M.M. Salimullah, Min-Soo Kim, M. Schaekers
Publikováno v:
ECS Solid State Letters. 1:P19-P21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6f9e375d882707dff6e9b31e3eb80c7
https://doi.org/10.1149/2.003202ssl
https://doi.org/10.1149/2.003202ssl
Autor:
A Das, T Kokubo, Y Furukawa, H Struyf, I Vos, B Sijmus, F Iacopi, J Van. Aelst, Q.T Le, L Carbonell, S Brongersma, M Maenhoudt, Z Tokei, I Vervoort, E Sleeckx, M Stucchi, M Schaekers, W Boullart, E Rosseel, M Van Hove, S Vanhaelemeersch, A Shiota, K Maex
Publikováno v:
Microelectronic Engineering. 64:25-33
Increasing the circuit density is driving the need for lower permittivity interlayer dielectrics (ILD) to reduce the capacitance between long parallel lines. JSR's LKD-5109, an MSQ-based material, is one of such low-k materials for the 65-nm node. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::418d616414353ade522e569289c856b9
https://doi.org/10.1016/s0167-9317(02)00768-2
https://doi.org/10.1016/s0167-9317(02)00768-2
Autor:
Y Travaly, B Eyckens, L Carbonel, A Rothschild, Q.T Le, S.H Brongersma, I Ciofi, H Struyf, Y Furukawa, M Stucchi, M Schaekers, H Bender, E Rosseel, S Vanhaelemeersch, K Maex, F Gaillard, L Van Autryve, P Rabinzohn
Publikováno v:
Microelectronic Engineering. 64:367-374
The impact of material/process interactions on low temperature CVD-O3 low-k dielectric film properties are presented. The film under investigation is deposited following a three-step process consisting of a low temperature chemical vapor deposition (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5cb1ae36b0c295b3eaf81a051f0201d
https://doi.org/10.1016/s0167-9317(02)00810-9
https://doi.org/10.1016/s0167-9317(02)00810-9