Mapping Modified Electronic Levels in the Moiré Patterns in MoS2/WSe2 Using Low-Loss EELS.

Autor: Susarla, Sandhya, M. Sassi, Lucas, Zobelli, Alberto, Woo, Steffi Y., Tizei, Luiz H. G., Stéphan, Odile, Ajayan, Pulickel M.

Publikováno v: Nano Letters; 5/12/2021, Vol. 21 Issue 9, p4071-4077, 7p

Mapping Modified Electronic Levels in the Moiré Patterns in MoS 2 /WSe 2 Using Low-Loss EELS.

Autor: Susarla S; Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States.; Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS, Orsay 91405, France., M Sassi L; Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States., Zobelli A; Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS, Orsay 91405, France., Woo SY; Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS, Orsay 91405, France., Tizei LHG; Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS, Orsay 91405, France., Stéphan O; Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS, Orsay 91405, France., Ajayan PM; Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States.

Publikováno v: Nano letters [Nano Lett] 2021 May 12; Vol. 21 (9), pp. 4071-4077. Date of Electronic Publication: 2021 Apr 26.