Zobrazeno 1 - 10
of 185
pro vyhledávání: '"M. Sasago"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 10:802-807
A three-dimensional topographical simulator PEACE (photo and electron beam lithography analyzing computer engineering system) is discussed. One of the difficulties in resist topographical simulation exists due to the three-dimensional resist developm
Autor:
Y. Nakata, Michihiro Inoue, S. Matsumoto, M. Sasago, J. Hasegawa, T. Yabu, T. Yamada, N. Matsuo, A. Shibayama, S. Okada, N. Amano
Publikováno v:
IEEE Journal of Solid-State Circuits. 26:1506-1510
A 64-Mb dynamic RAM (DRAM) has been developed with a meshed power line (MPL) and a quasi-distributed sense-amplifier driver (qDSAD) scheme. It realizes high speed, t/sub RAS/=50 ns (typical) at V/sub cc/=3.3 V, and 16-b input/output (I/O). This MPL+q
Autor:
K. Nakamatsu, K. Watanabe, K. Tone, T. Katase, W. Hattori, Y. Ochiai, T. Matsuo, M. Sasago, H. Namatsu, M. Komuro, S. Matsui
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference.
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
We propose new two phase shifting masks: centerline phase-shifting mask (CL-PSM) and outline phase-shifting mask (OL-PSM). CL-PSM enhances the DOF of line patterns more than alternating phase-shifting masks. OL-PSM drastically improves the resolution
Publikováno v:
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference.
Autor:
M. Sasago
Publikováno v:
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference.
The paper discusses the challenges of current optical lithography processes such as VUV lithography. Future miniaturization trends in semiconductor production are also discussed.
Publikováno v:
Technical Digest., International Electron Devices Meeting.
Novel, very simplified, high-aspect-ratio, single-layer resist materials and process technology for KrF excimer laser lithography have been developed. They consist of a negative resist, a positive resist, and a surface treatment process called HARD (
Autor:
Y. Nakata, N. Matsuo, T. Yabu, S. Matsumoto, Hisashi Ogawa, S. Okada, M. Sasago, K. Hashimoto
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
An advanced three-dimensionally (3-D) stacked capacitor cell, SVC, was developed. The SVC shows good electrical characteristics, and it realized a capacitance of 43 fF with a cell area of 1.8 mu m/sup 2/. The uniform formation of the capacitor-dielec
Autor:
M. Sasago
Publikováno v:
1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).
The semiconductor industry, whose long period of sustained growth is in no small measure due to the optical lithography process, is now on the verge of a dilemma. Optical lithography has arrived at a crossroads, and after many years of steady improve