Výsledky vyhledávání

High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

Autor: G. Di Gioia, E. Frayssinet, M. Samnouni, V. Chinni, P. Mondal, J. Treuttel, X. Wallart, M. Zegaoui, G. Ducournau, Y. Roelens, Y. Cordier, M. Zaknoune

Publikováno v: Journal of Electronic Materials
Journal of Electronic Materials, 2023, 52, pp.5249-5255. ⟨10.1007/s11664-023-10499-3⟩

International audience; Quasi-vertical gallium nitride (GaN) Schottky diodes on silicon carbide (SiC) substrates were fabricated for frequency multiplier applications. The epitaxial structure employed had an n− layer of 590 nm with doping 6.6 × 10

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38f596451b1f9cb33278570c4dad6a11
https://hal.science/hal-04115301

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75 nm gate length PHEMT with f max = 800 GHz using asymmetric gate recess: RF and noise investigation

Autor: C. Coinon, N. Wichmann, Sylvie Lepilliet, Sylvain Bollaert, M. Samnouni, Xavier Wallart

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, 68 (9), pp.4289-4295. ⟨10.1109/TED.2021.3098255⟩
IEEE Transactions on Electron Devices, 2021, 68 (9), pp.4289-4295. ⟨10.1109/TED.2021.3098255⟩

We report a high maximum frequency of oscillation ( ${f} _{\text {max}}$ ) and a current-gain cutoff frequency ( ${f} _{\text {T}}$ ) of 800 and 260 GHz, respectively, with pseudomorphic high-electron mobility transistor (PHEMT), using an InGaAs/InAs

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd70dc9a6b0959a72267f78a7e7212a6
https://hal.archives-ouvertes.fr/hal-03419728

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Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations

Autor: J. Mateos, B. Orfao, M. Samnouni, G.Di Gioia, Diego Moro-Melgar, M. Zaknoune, Beatriz G. Vasallo, Tomas Gonzalez, Susana Perez

Publikováno v: GREDOS. Repositorio Institucional de la Universidad de Salamanca
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2021 13th Spanish Conference on Electron Devices (CDE)
2021 13th Spanish Conference on Electron Devices (CDE), Jun 2021, Sevilla, Spain. pp.94-97, ⟨10.1109/CDE52135.2021.9455727⟩

[EN]Schottky barrier diodes (SBDs) with realistic geometries have been studied by means of a 2-D ensemble Monte Carlo simulator. The non-linearity of the Capacitance-Voltage (C-V) characteristic is the most important parameter for optimizing SBDs as

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be3d7eac3ed2e9983803ae26266dbcbe
http://hdl.handle.net/10366/147145

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1.2 THz maximum frequency of oscillation achieved by using 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT

Autor: Xavier Wallart, Sylvain Bollaert, C. Coinion, M. Samnouni, N. Wichmann, S. Lepilliet

Publikováno v: 2019 Compound Semiconductor Week (CSW).

We report a high maximum frequency of oscillation ( $f_{\max}$ ) and a current-gain cutoff frequency $(\boldsymbol{f}_{\mathbf{T}}).\boldsymbol{f}_{\mathbf{\max}}/\boldsymbol{f}_{\mathbf{T}} =1.2\ \mathbf{THz}/220 \mathbf{GHz}$ ; at $\boldsymbol{V}_{

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6d1b39887a971a4a9046c6965fecce53
https://doi.org/10.1109/iciprm.2019.8819183

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