Zobrazeno 1 - 10
of 342
pro vyhledávání: '"M. Saif Islam"'
Autor:
Badriyah Alhalaili, Ryan James Bunk, Howard Mao, Hilal Cansizoglu, Ruxandra Vidu, Jerry Woodall, M. Saif Islam
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-14 (2020)
Abstract In the last decade, interest in the use of beta gallium oxide (β-Ga2O3) as a semiconductor for high power/high temperature devices and deep-UV sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for these
Externí odkaz:
https://doaj.org/article/dbe8d3e9650e4b95b1857b6eef848506
Autor:
Cesar Bartolo-Perez, Wayesh Qarony, Soroush Ghandiparsi, Ahmed S. Mayet, Ahasan Ahamed, Hilal Cansizoglu, Yang Gao, Ekaterina Ponizovskaya Devine, Toshishige Yamada, Aly F. Elrefaie, Shih-Yuan Wang, M. Saif Islam
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 6, Pp n/a-n/a (2021)
Silicon photodetectors (PDs) operating at near‐IR wavelengths with high speed and high sensitivity are becoming critical for emerging applications, such as light detection and ranging (LIDAR) systems, quantum communications, and medical imaging. Ho
Externí odkaz:
https://doaj.org/article/34272776c0d94d2c87cc0a1fc097e9ce
Autor:
Badriyah Alhalaili, Ahmad Al-Duweesh, Ileana Nicoleta Popescu, Ruxandra Vidu, Luige Vladareanu, M. Saif Islam
Publikováno v:
Sensors, Vol 22, Iss 5, p 2048 (2022)
Interest in the synthesis and fabrication of gallium oxide (Ga2O3) nanostructures as wide bandgap semiconductor-based ultraviolet (UV) photodetectors has recently increased due to their importance in cases of deep-UV photodetectors operating in high
Externí odkaz:
https://doaj.org/article/dc9cc51eb6a54672b42e6a222535bd23
Autor:
Dewyani Patil-Chaudhari, Matthew Ombaba, Jin Yong Oh, Howard Mao, Kyle H. Montgomery, Andrew Lange, Subhash Mahajan, Jerry M. Woodall, M. Saif Islam
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 2, Pp 1-7 (2017)
A simple and inexpensive method for growing Ga2O3 using GaAs wafers is demonstrated. Si-doped GaAs wafers are heated to 1050 °C in a horizontal tube furnace in both argon and air ambients in order to convert their surfaces to β-Ga2O3. The β-Ga2O3
Externí odkaz:
https://doaj.org/article/a609be6eaa4a4ed9898b05ac442ad1c3
Autor:
Badriyah Alhalaili, Howard Mao, Daniel M. Dryden, Hilal Cansizoglu, Ryan James Bunk, Ruxandra Vidu, Jerry Woodall, M. Saif Islam
Publikováno v:
Materials, Vol 13, Iss 23, p 5377 (2020)
A simple and inexpensive thermal oxidation process was performed to synthesize gallium oxide (Ga2O3) nanowires using Ag thin film as a catalyst at 800 °C and 1000 °C to understand the effect of the silver catalyst on the nanowire growth. The effect
Externí odkaz:
https://doaj.org/article/6222bb609af84115ad6119d3a3160196
Publikováno v:
Nanomaterials, Vol 10, Iss 10, p 1920 (2020)
Gallium oxide (Ga2O3) is a new wide bandgap semiconductor with remarkable properties that offers strong potential for applications in power electronics, optoelectronics, and devices for extreme conditions. In this work, we explore the morphology of G
Externí odkaz:
https://doaj.org/article/52d5674f4742424dae009f76193efd4f
Publikováno v:
Nanomaterials, Vol 9, Iss 9, p 1272 (2019)
In the last few years, interest in the use of gallium oxide (Ga2O3) as a semiconductor for high power/high temperature devices and UV nano-sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for applications in har
Externí odkaz:
https://doaj.org/article/f603535a2d4e4e64b191b2882d3dd07d
Autor:
Amita Rawat, Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed S. Mayet, Lisa N. McPhillips, M. Saif Islam
Publikováno v:
ACS photonics, vol 10, iss 5
Since the advent of impact ionization and its application in avalanche photodiodes (APD), numerous application goals have contributed to steady improvements over several decades. The characteristic high operating voltages and the need for thick absor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f99011c1300d22781c073db7afee4c67
https://doi.org/10.1021/acsphotonics.3c00026
https://doi.org/10.1021/acsphotonics.3c00026
Autor:
Ekaterina Ponizovskaya-Devine, Ahmed S. Mayet, Amita Rawat, Ahasan Ahamed, Shih-Yuan Wang, Aly F. Elrefaie, Toshishige Yamada, M. Saif Islam
Publikováno v:
Journal of Nanophotonics. 17
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63d7a2c2c3dee3c9168217c6643a0ac0
https://doi.org/10.1117/1.jnp.17.016012
https://doi.org/10.1117/1.jnp.17.016012
Autor:
Galan Moody, M. Saif Islam
Publikováno v:
MRS Bulletin. 47:475-484
High-speed optoelectronics is central to many important developments in the communication, computing, sensing, imaging, and autonomous vehicle industries. With a sharp rise of attention on energy efficiency, researchers have proposed and demonstrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0351b749975ecfde6628c210e50384a8
https://doi.org/10.1557/s43577-022-00337-y
https://doi.org/10.1557/s43577-022-00337-y