Zobrazeno 1 - 10
of 10
pro vyhledávání: '"M. Sadegh Dadash"'
Autor:
Juergen Hasch, Sorin P. Voinigescu, Ming Jia Gong, M. Sadegh Dadash, S. Bonen, Alireza Zandieh
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques
A radar transceiver with two transmitters (TXs) and two receivers (RXs) is reported in 22 nm fully depleted silicon-on-insulator (FDSOI) CMOS. It includes a novel 200 MHz bandwidth 80 GHz phase-locked loop (PLL) based on a single-sideband (SSB) upcon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a8d7568de3ae97247f19c5d28a604c4
https://doi.org/10.1109/tmtt.2021.3094189
https://doi.org/10.1109/tmtt.2021.3094189
Autor:
Shai Bonen, M. Sadegh Dadash, Alireza Zandieh, Utku Alakuşu, Ming Jia Gong, Jashva Rafique, Lucy Wu, Eric Checca, Hao Yun Hsu, Suyash Pati Tripathi, Gregory Cooke, Sorin P. Voinigescu
Publikováno v:
Solid-State Electronics. 194:108343
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e3943423ace14226ba982597ec8ebb2
https://doi.org/10.1016/j.sse.2022.108343
https://doi.org/10.1016/j.sse.2022.108343
Autor:
M. Sadegh Dadash, Sorin P. Voinigescu, Andreia Cathelin, Pascal Chevalier, Ned Cahoon, Jurgen Hasch
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 65:5377-5388
The system and transistor-level design of low-power millimeter wave (mm-wave) active tags in silicon is discussed in detail. Two active mm-wave tags with identical system architecture, padframe, and chip size were designed and fabricated in 55-nm SiG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e9d2a363d21ebd65af6df06523ad37a
https://doi.org/10.1109/tmtt.2017.2769079
https://doi.org/10.1109/tmtt.2017.2769079
Publikováno v:
2018 13th European Microwave Integrated Circuits Conference (EuMIC).
The high frequency performance of fully wired 22nm FDSOI n- and p- MOSFETs was measured for the first time up to 170 GHz and 125 °C. Record MAG of 8 and 7 dB, respectively, is reported for n- and p-MOSFETs at 170 GHz, higher than for any other MOSFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c5a3ebfae67dac2aedbc71c01ccf837
https://doi.org/10.23919/eumic.2018.8539934
https://doi.org/10.23919/eumic.2018.8539934
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
An active mm-wave tag was manufactured in a 55nm SiGe BiCMOS process and operates in the 74–83GHz band with −62dBm input sensitivity. It features a 28dB gain LNA with 9dB noise figure, a wake-up detector, a BPSK modulator and two variable gain ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68aab07eee68402fe424d682c796f4c3
https://doi.org/10.1109/mwsym.2017.8058919
https://doi.org/10.1109/mwsym.2017.8058919
Publikováno v:
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
An 18-mW active millimeter-wave reflector fabricated in 45-nm SOI CMOS technology exhibits a peak gain of 20 dB at 77 GHz, a 3-dB bandwidth of 5 GHz from 75.5 to 80.5 GHz, and a 50-Ω noise figure of 7.5–8.5 dB over the same frequency band. It cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53df0b05eee4bd5577792416015d2260
https://doi.org/10.1109/rfic.2017.7969080
https://doi.org/10.1109/rfic.2017.7969080
Autor:
M. Sadegh Dadash, Natalia K. Nikolova
Publikováno v:
IEEE Microwave and Wireless Components Letters. 24:291-293
An exact sensitivity expression is proposed for the computation of $S$ -parameter derivatives with respect to the shape parameters of isotropic dielectric objects. While an exact expression has already been developed for the shape parameters of volum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47a6f573d080d15c1248a1c6e58cb4f3
https://doi.org/10.1109/lmwc.2014.2306891
https://doi.org/10.1109/lmwc.2014.2306891
Publikováno v:
2012 IEEE/MTT-S International Microwave Symposium Digest.
Computing the derivatives of the scattering parameters of microwave devices with respect to shape and material parameters is a problem of significant interest in high-frequency computer-aided design. The pioneering work of Bandler, Monaco, Tiberio an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b9748b09c272d24fc824f5d08e49b89
https://doi.org/10.1109/mwsym.2012.6259447
https://doi.org/10.1109/mwsym.2012.6259447
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