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pro vyhledávání: '"M. S. Zayats"'
Autor:
Ts. A. Kryskov, M. P. Kisselyuk, O. S. Litvin, I. V. Kruglenko, M. S. Zayats, O. I. Vlasenko, M. V. Vuychik, P. O. Gentsar
Publikováno v:
Semiconductors. 44:1012-1015
Morphological and optical studies (ellipsometry and reflectance spectroscopy in the ranges 400–750 nm and 1.4–25 μm) of thin GaSe films fabricated by thermal evaporation on the n-Si (111) single-crystal substrates are reported. The film thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7bc8426becef1667b3242dc46e391ab
https://doi.org/10.1134/s1063782610080099
https://doi.org/10.1134/s1063782610080099
