Zobrazeno 1 - 2
of 2
pro vyhledávání: '"M. S. Seksenbaev"'
Autor:
M. S. Seksenbaev, A. I. Yakimov, T. S. Shamirzaev, A. I. Nikiforov, S. V. Chaikovskii, A. V. Dvurechenskii, M. D. Efremov, K. S. Zhuravlev, Vladimir A. Volodin, V. V. Ul’yanov, V. V. Kirienko, N. P. Stepina
Publikováno v:
Semiconductors. 38:1225-1229
The results of research aimed at the development of high-efficiency Ge/Si-based photodetectors for fiber-optic communication applications are reported. The photodetectors are designed as vertical p-i-n diodes on silicon-on-insulator substrates in com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6df15006b6470e86ca792652ac9e0a4
https://doi.org/10.1134/1.1808834
https://doi.org/10.1134/1.1808834
Autor:
K. S. Zhuravlev, V. V. Ul’yanov, T. S. Shamirzaev, M. S. Seksenbaev, A. I. Nikiforov, O. P. Pchelyakov
Publikováno v:
Physics of the Solid State. 47:82
The photoluminescence of quantum dots in Si/Ge/SiO2/Si and Si/Ge/Si structures is investigated as a function of temperature. The low activation energies for the temperature quenching of photoluminescence of germanium quantum dots in both structures a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa1d420d3fcec24a8fdce594fbb8ab40
https://doi.org/10.1134/1.1853450
https://doi.org/10.1134/1.1853450