Výsledky vyhledávání - "M. S. Puttock"

Assessment of Surface Damage of Gallium Arsenide due to Reactive Ion Etching

Autor: K. P. Hilton, Dietrich R. T. Zahn, U. Rossow, W. Richter, D.V. Morgan, H. Thomas, J. Woodward, M. S. Puttock

Publikováno v: MRS Proceedings. 190

Crystal damage of GaAs(100) caused by Reactive Ion Etching (RIE) using a mixture of Cl2 and Ar gas has been assessed using Surface Roughness (Ra), Resonant Raman Spectroscopy (RRS), Schottky diodes, and Spectroscopic Ellipsometry (SE). Plasma conditi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e9fbb0c18fa0295615cab3ffa7ef563a
https://doi.org/10.1557/proc-190-255

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Plasma-etched and sputtered GaAs(100) surfaces investigated by ellipsometry and Raman spectroscopy

Autor: J Geurts, U. Rossow, K. P. Hilton, T. Fieseler, D T R Zhan, M. S. Puttock, W. Richter

Publikováno v: Journal of Physics: Condensed Matter. 1:SB231-SB233

GaAs(100) surfaces were prepared by reactive ion etching using different etches and a series of plasma powers. In order to study the surface quality, ellipsometry and Raman scattering were applied. This combination allows damage at the surface and th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d38a845e821360ee39c713e14bdbdc45
https://doi.org/10.1088/0953-8984/1/sb/055

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