Zobrazeno 1 - 3
of 3
pro vyhledávání: '"M. S. Puttock"'
Autor:
K. P. Hilton, Dietrich R. T. Zahn, U. Rossow, W. Richter, D.V. Morgan, H. Thomas, J. Woodward, M. S. Puttock
Publikováno v:
MRS Proceedings. 190
Crystal damage of GaAs(100) caused by Reactive Ion Etching (RIE) using a mixture of Cl2 and Ar gas has been assessed using Surface Roughness (Ra), Resonant Raman Spectroscopy (RRS), Schottky diodes, and Spectroscopic Ellipsometry (SE). Plasma conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9fbb0c18fa0295615cab3ffa7ef563a
https://doi.org/10.1557/proc-190-255
https://doi.org/10.1557/proc-190-255
Publikováno v:
Journal of Physics: Condensed Matter. 1:SB231-SB233
GaAs(100) surfaces were prepared by reactive ion etching using different etches and a series of plasma powers. In order to study the surface quality, ellipsometry and Raman scattering were applied. This combination allows damage at the surface and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d38a845e821360ee39c713e14bdbdc45
https://doi.org/10.1088/0953-8984/1/sb/055
https://doi.org/10.1088/0953-8984/1/sb/055
This volume focuses on a variety of novel non-destructive techniques for the characterization of materials, processes and devices. Emphasis is placed on probe-specimen interactions, in-situ diagnosis, instrumentation developments and future trends. T
