Zobrazeno 1 - 10
of 14
pro vyhledávání: '"M. S. Mukhin"'
Autor:
Alexey M. Mozharov, L N Dvoretckaia, G. A. Sapunov, V. A. Shkoldin, K. Yu Shugurov, M. S. Mukhin, Ivan Mukhin, Alexey D. Bolshakov, G. E. Cirlin, Vladimir V. Fedorov
Publikováno v:
Semiconductors. 52:2088-2091
In this paper we demonstrate the results on selective area growth of GaP nanowires via self-catalyzed growth method using molecular beam epitaxy (MBE) technique on patterned Si(111) substrates. The pattern fabrication method on a base of the photolit
Autor:
Alexey M. Mozharov, A. V. Uvarov, M. S. Mukhin, Igor Shtrom, G E Cirlin, Ivan Mukhin, G. A. Sapunov, K. Yu Shugurov, Vladimir V. Fedorov, Alexey D. Bolshakov
Publikováno v:
Nanotechnology. 30(39)
The role of Si (111) substrate surface preparation and buffer layer composition in the growth, electronic and optical properties of the GaN nanowires (NWs) synthesized via plasma-assisted molecular beam epitaxy is studied. A comparison study of GaN N
Publikováno v:
Опухоли женской репродуктивной системы, Vol 18, Iss 3, Pp 89-99 (2022)
Background. Endometrial hyperplasia is one of the most common pathologies of the female reproductive system. There is a high risk of transformation of an atypical form of endometrial hyperplasia into endometrial cancer, which takes a leading position
Externí odkaz:
https://doaj.org/article/22073ab9b04f4db6b56b383a328b7345
Autor:
Alexey D. Bolshakov, M. S. Mukhin, G. E. Cirlin, L. N. Dvoreckaia, Vladimir V. Fedorov, Konstantin Shugurov, V. A. Shkoldin, Alexey M. Mozharov, Igor Shtrom, Ivan Mukhin, G. A. Sapunov
Publikováno v:
Journal of Physics: Conference Series. 1092:012013
Publikováno v:
Russian Journal of Physical Chemistry A. 83:1165-1169
Nanostructured sulfidized lead films were prepared by cryoformation with modification of the surface by hydrogen sulfide and lead sulfide. Such films were compared with oxidized lead films. Sulfidized nanosystems had higher sensitivity to water vapor
Autor:
A. A. Toropov, Sergei Gronin, M. S. Mukhin, Sergei Ivanov, Ya. V. Terent’ev, G. V. Klimko, S. V. Sorokin, F. Liaci, V. Kh. Kaibyshev, I. V. Sedova
Publikováno v:
physica status solidi c. 9:1790-1792
In this report we present the study, by means of low-temperature magneto-optical measurements, of the spin transport dynamics in a heterovalent MBE-grown III-V/II-VI structure under optical pumping. The structure consists of two coupled GaAs quantum
Autor:
M. S. Mukhin, B. Ya. Meltser, Mikhail Nestoklon, Sergei Ivanov, A. N. Semenov, V. A. Solov’ev, Ya. V. Terent’ev, A. A. Toropov
Publikováno v:
Physical Review B. 87
Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly polarized photoluminescence in an external magnetic field applied in Farad
Autor:
Alexey M. Mozharov, M. S. Mukhin, Ivan Mukhin, Filipp E. Komissarenko, G. E. Cirlin, Eduard Moiseev, A. A. Vasiliev, Alexey D. Bolshakov
Publikováno v:
Journal of Physics: Conference Series. 741:012002
Electrical properties of single GaN nanowires grown by means of molecular beam epitaxy with N-plasma source were studied. Ohmic contacts connected to single n-type GaN wires were produced by the combination of electron beam lithography, metal vacuum
Autor:
Vassilij Belkov, V. A. Solov’ev, V. Lechner, T. A. Komissarova, C. Drexler, C. Zoth, S. V. Ivanov, Sergey Ganichev, Peter Lutz, Peter Olbrich, G. V. Klimko, A. N. Semenov, S. A. Tarasenko, Ya. V. Terent’ev, M. S. Mukhin, I. V. Sedova
Diluted magnetic semiconductor heterovalent AlSb/InAs/ZnMnTe quantum well (QW) structures with an electron channel have been designed and grown applying molecular-beam epitaxy. The enhanced magnetic properties of QWs as a result of the exchange inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42c8eebb64f7367883616b94b183de2c
Autor:
Ya. V. Terent'ev, M. S. Mukhin, A. A. Toropov, B. Ya Meltser, A. N. Semenov, S. V. Ivanov, Jisoon Ihm, Hyeonsik Cheong
Publikováno v:
AIP Conference Proceedings.
Circular‐polarized magneto‐photoluminescence of InSb/InAs type‐II quantum dots has been investigated at a magnetic field applied in the Faraday geometry in the wide range of the excitation intensity. It was observed that under condition of the