Zobrazeno 1 - 10
of 16
pro vyhledávání: '"M. S. Minsky"'
Autor:
Umesh K. Mishra, M. S. Minsky, Larry A. Coldren, Shigefusa F. Chichibu, Peter Kozodoy, Shuji Nakamura, Takayuki Sota, Takahiro Deguchi, Daniel Cohen, Michael Mack, James S. Speck, John E. Bowers, Amber C. Abare, Evelyn L. Hu, K. Wada, Sarah L. Keller, S. B. Fleischer, Steven P. DenBaars
Publikováno v:
Materials Science and Engineering: B. 59:298-306
The emission mechanisms of strained InGaN quantum wells (QWs) were shown to vary depending on the well thickness L and InN molar fraction x . The QW resonance energy was shifted to lower energy by the quantum confined Stark effect (QCSE) due to the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1312f5cac6184d401457526514608085
https://doi.org/10.1016/s0921-5107(98)00359-6
https://doi.org/10.1016/s0921-5107(98)00359-6
Autor:
Evelyn L. Hu, Steven P. DenBaars, Sarah L. Keller, Jasprit Singh, Hongtao Jiang, M. S. Minsky
Publikováno v:
IEEE Journal of Quantum Electronics. 35:1483-1490
InGaN-GaN represents an important heterostructure with applications in electronics and optoelectronics. It also offers a system where we can study the effects of interface roughness, alloy clustering, and the piezoelectric effect. In the paper, we ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73a8759db18fa58e8d7a03ef6b8d7be7
https://doi.org/10.1109/3.792574
https://doi.org/10.1109/3.792574
Autor:
M. S. Minsky, Shigefusa F. Chichibu, Umesh K. Mishra, Sarah L. Keller, Evelyn L. Hu, Steven P. DenBaars
Publikováno v:
Journal of Crystal Growth. 195:258-264
InGaN/GaN single and multi quantum wells have been grown by metal-organic chemical vapor deposition, varying the growth rate of well and barrier layers as well as the Si-doping of the GaN barriers. Separately, the effect of these growth parameters on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b62572eea773170236f07d7fe6b79ca6
https://doi.org/10.1016/s0022-0248(98)00680-0
https://doi.org/10.1016/s0022-0248(98)00680-0
Autor:
M. S. Minsky, Umesh K. Mishra, Werner Seifert, John E. Bowers, Bernd Keller, Stacia Keller, Steven P. DenBaars
Publikováno v:
Journal of Crystal Growth. :29-32
Strong photoluminescence and radiative recombination lifetimes longer than 1 ns at room temperature have been observed in GaN/Si/InGaN/GaN structures containing InGaN submicron islands. The flat islands, with a width at their base in the order of 200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ddc3c7f7dd28c2ced23c174ef5c36d7
https://doi.org/10.1016/s0022-0248(98)00150-x
https://doi.org/10.1016/s0022-0248(98)00150-x
Autor:
Sarah L. Keller, John E. Bowers, M. S. Minsky, G. Wang, Steven P. DenBaars, Tien-Lung Chiu, Chi-Kuang Sun
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 3:731-738
We present a well-width-dependent study of InGaN-GaN single-quantum wells using a time-resolved photoluminescence (PL) technique. At room temperature (RT), carrier recombination was found to be dominated by interface-related nonradiative processes. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31f9f93f7c54c9ea989ed9777f9794bf
https://doi.org/10.1109/2944.640628
https://doi.org/10.1109/2944.640628
Autor:
Paul T. Fini, Evelyn L. Hu, Sarah L. Keller, James S. Speck, M. S. Minsky, John E. Bowers, S. B. Fleischer, Shigefusa F. Chichibu, H. Marchand, Steven P. DenBaars, J. P. Ibbetson, Takahiro Deguchi, Umesh K. Mishra, Takayuki Sota, Shuji Nakamura
Publikováno v:
Applied Physics Letters. 74:1460-1462
The emission mechanisms of bulk GaN and InGaN quantum wells (QWs) were studied by comparing their optical properties as a function of threading dislocation (TD) density, which was controlled by lateral epitaxial overgrowth. Slightly improved excitoni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81bfd137188cfec110d4fbdbd740fc13
https://doi.org/10.1063/1.123581
https://doi.org/10.1063/1.123581
Autor:
Umesh K. Mishra, Evelyn L. Hu, Larry A. Coldren, S. B. Fleischer, Stacia Keller, M. S. Minsky, John E. Bowers, Shigefusa F. Chichibu, Steven P. DenBaars, T. Sota, Amber C. Abare
Publikováno v:
Applied Physics Letters. 73:2006-2008
The emission mechanisms of strained InxGa1−xN quantum wells (QWs) were shown to vary depending on the well thickness, L, and x. The absorption edge was modulated by the quantum confined Stark effect and quantum confined Franz-Keldysh effect (QCFK)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef37c3001614666ff485763de8962894
https://doi.org/10.1063/1.122350
https://doi.org/10.1063/1.122350
Autor:
Evelyn L. Hu, Umesh Mishra, Yong-Hoon Cho, J. J. Song, Steven P. DenBaars, M. S. Minsky, Sarah L. Keller
Publikováno v:
Applied Physics Letters. 73:1128-1130
We have systematically studied the influence of Si doping on the characteristics of InGaN/GaN multiple quantum wells (MQWs) by means of high-resolution x-ray diffraction (HRXRD), photoluminescence (PL), PL excitation (PLE), and time-resolved PL spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03a9ac9c4225710455563d4a4ee85294
https://doi.org/10.1063/1.122105
https://doi.org/10.1063/1.122105
Autor:
Larry A. Coldren, M. S. Minsky, Shigefusa F. Chichibu, Umesh K. Mishra, Michael Mack, Peter Kozodoy, Amber C. Abare, David R. Clarke, Daniel A. Cohen, Steven P. DenBaars, Sarah L. Keller, S. B. Fleischer, John E. Bowers
Publikováno v:
Applied Physics Letters. 73:496-498
Optical gain spectra of InGaN multiquantum well laser diode wafers having Si-doped or undoped InGaN barriers were compared. Although evidence for effective band-gap inhomogeneity was found in both structures, the wells with the Si-doped barriers exhi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6e6be0cde2fd1c2c1dc99af191cce7d
https://doi.org/10.1063/1.121912
https://doi.org/10.1063/1.121912
Autor:
Steven P. DenBaars, S. B. Fleischer, Amber C. Abare, Sarah L. Keller, M. S. Minsky, John E. Bowers, Evelyn L. Hu
Publikováno v:
Applied Physics Letters. 72:1066-1068
Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed photoluminescence measurements. Room-temperature measurements show a rapid lifetime (0.06 ns) for a single qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2cacba848327d736e2c1b34feccc061
https://doi.org/10.1063/1.120966
https://doi.org/10.1063/1.120966