Zobrazeno 1 - 10
of 17
pro vyhledávání: '"M. S. Joludev"'
Autor:
A. V. Antonov, S. V. Morozov, S. Winnerl, O. Drachenko, M. S. Joludev, Harald Schneider, V. Ya. Aleshkin, Alexander A. Dubinov, V. I. Gavrilenko, Nikolay N. Mikhailov, S. A. Dvoretskiy, Vladimir Rumyantsev, Manfred Helm
Publikováno v:
Semiconductors 46(2012), 1362-1366
Carrier lifetimes in the continuum of the quantum well of a Hg (x) Cd1 - x Te/Cd (y) Hg1 - y Te hetero-structure were studied by terahertz pump-probe spectroscopy. It is found that the relaxation duration of the transmission signal is similar to 65 p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27d6aaff5727cfcba168f7e163edde19
https://www.hzdr.de/publications/Publ-18070-1
https://www.hzdr.de/publications/Publ-18070-1
Autor:
Sergey M. Sergeev, D. I. Kuritsin, K. V. Maremyanin, A. V. Antonov, E. E. Orlova, M. S. Joludev, I. V. Erofeeva, S. V. Morozov, L. V. Gavrilenko, Vladimir I. Gavrilenko
Publikováno v:
Journal of Physics: Conference Series. 193:012087
In n-GaAs/InGaAsP and p-Ge/GeSi quantum well heterostructures excited by both the picosecond broad band and the nanosecond narrow band pulses of THz radiation the relaxation times of the impurity photoconductivity were measured. In one of the sample
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15884ed1a12a0b6989fd5668b9ba96ab
https://doi.org/10.1088/1742-6596/193/1/012087
https://doi.org/10.1088/1742-6596/193/1/012087
Autor:
Kudryavtsev, K. E., Rumyantsev, V. V., Utochkin, V. V., Fadeev, M. A., Aleshkin, V. Ya., Dubinov, A. A., Zholudev, M. S., Mikhailov, N. N., Dvoretskii, S. A., Remesnik, V. G., Teppe, F., Gavrilenko, V. I., Morozov, S. V.
Publikováno v:
Journal of Applied Physics; 12/7/2021, Vol. 130 Issue 21, p1-9, 9p
Autor:
Khanin, Yu. N.1, Vdovin, E. E.1 vdov62@yandex.ru
Publikováno v:
Semiconductors. Jun2018, Vol. 52 Issue 6, p739-744. 6p.
Autor:
Rumyantsev, V. V.1,2 rumyantsev@ipmras.ru, Bovkun, L. S.1,3, Kadykov, A. M.1,4, Fadeev, M. A.1, Dubinov, A. A.1,2, Aleshkin, V. Ya.1,2, Mikhailov, N. N.5,6, Dvoretsky, S. A.5, Piot, B.3, Orlita, M.3,7, Potemski, M.3, Teppe, F.4, Morozov, S. V.1,2, Gavrilenko, V. I.1,2
Publikováno v:
Semiconductors. Apr2018, Vol. 52 Issue 4, p436-441. 6p.
Autor:
Rumyantsev, V. rumyantsev@ipm.sci-nnov.ru, Fadeev, M., Morozov, S., Dubinov, A., Kudryavtsev, K., Kadykov, A., Tuzov, I.1, Dvoretskii, S.2, Mikhailov, N., Gavrilenko, V., Teppe, F.3
Publikováno v:
Semiconductors. Dec2016, Vol. 50 Issue 12, p1651-1656. 6p.
Autor:
Rumyantsev, V.1 rumyantsev@ipmras.ru, Ikonnikov, A.1, Antonov, A.1, Morozov, S., Zholudev, M.1, Spirin, K.1, Gavrilenko, V., Dvoretskii, S.2, Mikhailov, N.2
Publikováno v:
Semiconductors. Nov2013, Vol. 47 Issue 11, p1438-1441. 4p.
Autor:
Gavrilenko, V.I., Morozov, S.V., Rumyantsev, V.V., Bovkun, L.S., Kadykov, A.M., Maremyanin, K.V., Umbetalieva, K. R., Chizhevskii, E. G., Zasavitskii, I. I., Mikhailov, N.N., Dvoretskii, S.A.
Publikováno v:
2016 21st International Conference on Microwave, Radar & Wireless Communications (MIKON); 2016, p1-4, 4p
Autor:
Morozov, S. V., Rumyantsev, V. V., Fadeev, M. A., Zholudev, M. S., Kudryavtsev, K. E., Antonov, A. V., Kadykov, A. M., Dubinov, A. A., Mikhailov, N. N., Dvoretsky, S. A., Gavrilenko, V. I.
Publikováno v:
Applied Physics Letters; 11/6/2017, Vol. 111 Issue 19, p192101-1-192101-5, 5p, 2 Charts, 3 Graphs
Autor:
Morozov, S. V., Rumyantsev, V. V., Kadykov, A. M., Dubinov, A. A., Kudryavtsev, K. E., Antonov, A. V., Mikhailov, N. N., Dvoretskii, S. A., Gavrilenko, V. I.
Publikováno v:
Applied Physics Letters; 2/29/2016, Vol. 108 Issue 9, p1-5, 5p, 2 Charts, 5 Graphs