Zobrazeno 1 - 10
of 25
pro vyhledávání: '"M. S. Buyalo"'
Autor:
V. S. Mikhrin, A. V. Zhabotinskii, M. S. Buyalo, S. V. Poltavtsev, S. S. Mikhrin, A. E. Gubenko, A. R. Kovsh
Publikováno v:
Optical Fiber Communication Conference (OFC) 2023.
High-power O-band Quantum Dot Distributed-Feedback Laser for pluggable DR4/DR8 optical transceivers and Remote Laser Modules is presented. It exhibits PCE as high as 20% up to 105°C and CW power exceeding 300mW at 85°C.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2c88ad4b79112ea5a0ddae8148ffec7
https://doi.org/10.1364/ofc.2023.th4a.1
https://doi.org/10.1364/ofc.2023.th4a.1
Autor:
I. M. Gadzhiev, M. S. Buyalo, A. S. Payusov, E. L. Portnoi, I. O. Bakshaev, E. D. Kolykhalova
Publikováno v:
Technical Physics Letters. 46:316-318
The mode of generation of picosecond optical pulses in the spectral range near 1064 nm by semiconductor lasers with distributed feedback and active region based on an InGaAs/GaAs quantum well has been studied. In the gain-modulation mode, the width o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f64b3df85fd7562a9c3db95c33efd8bf
https://doi.org/10.1134/s1063785020040069
https://doi.org/10.1134/s1063785020040069
Autor:
A. E. Gubenko, M. S. Buyalo, V. N. Nevedomsky, I. M. Gadzhiyev, A. S. Payusov, Efim L. Portnoi, S. S. Mikhrin
Publikováno v:
Technical Physics Letters. 44:965-968
We have investigated two-sectional semiconductor lasers with an active region comprising five layers of InGaAs quantum dots, emitting in the spectral range near 1.06 μm. Regimes of passive mode-locking, passive Q-switching, and mode-locking with pul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13c33e797423ed917d69d3e271504a00
https://doi.org/10.1134/s1063785018110068
https://doi.org/10.1134/s1063785018110068
Autor:
Efim L. Portnoi, Innokenty I. Novikov, N. D. Il’inskaya, M. S. Buyalo, L. Ya. Karachinsky, E. S. Kolodeznyi, A. Yu. Egorov, I. M. Gadzhiyev, Vladislav E. Bougrov, A. A. Usikova
Publikováno v:
Technical Physics Letters. 44:174-177
We present the results of an experimental study of two-section semiconductor lasers with active region consisting of three 3.1 nm InGaAs/InGaAlAs quantum wells. Passive mode-locking regime with a repetition rate of 10 GHz is realized. Different appro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb8651ccc497a2dcda8f3a3cde13e6d7
https://doi.org/10.1134/s1063785018020189
https://doi.org/10.1134/s1063785018020189
Autor:
A. V. Babichev, A. G. Gladyshev, A. S. Kurochkin, Innokenty I. Novikov, I. M. Gadzhiev, A. V. Savelyev, Vladislav E. Bougrov, I. A. Nyapshaev, Yu. M. Zadiranov, A. A. Usikova, A. Yu. Egorov, E. S. Kolodeznyi, M. S. Buyalo, Yu. M. Shernyakov, L. Ya. Karachinsky
Publikováno v:
Semiconductors. 50:1412-1415
The results of experimental studies of the gain properties of “thin” (3.2 nm thick) elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm are presented. The results of studying the threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6dff874f51f611bd7deb8ae2a9e39a6
https://doi.org/10.1134/s1063782616100201
https://doi.org/10.1134/s1063782616100201
Autor:
M. S. Buyalo, A. V. Lyutetskiy, I. M. Gadzhiyev, A. Yu. Egorov, Yu. M. Zadiranov, N. D. Il’inskaya, E. L. Portnoi, A. E. Gubenko, A. A. Usikova
Publikováno v:
Semiconductors. 50:828-831
The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f18224bc45979db778ffa7282ed4603
https://doi.org/10.1134/s1063782616060051
https://doi.org/10.1134/s1063782616060051
Autor:
M. M. Sobolev, V. N. Nevedomskiy, M. S. Buyalo, E. L. Portnoi, A. P. Vasil’ev, R. V. Zolotareva, V. M. Ustinov, Yu. M. Zadiranov
Publikováno v:
Semiconductors. 49:1335-1340
The spectral characteristics of a laser with an active region based on a ten-layer system of In(Ga)As/GaAs vertically correlated quantum dots with 4.5-nm GaAs spacer layers between InAs quantum dots are studied under the conditions of spontaneous and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19ac9adc176c61dacdf774decdfc8969
https://doi.org/10.1134/s1063782615100243
https://doi.org/10.1134/s1063782615100243
Autor:
A. S. Kurochkin, Anton Yu. Egorov, E. S. Kolodeznyi, Innokenty I. Novikov, A. V. Babichev, A. G. Gladyshev, Anna A. Usikova, Leonid Ya. Karachinsky, I. M. Gadzhiev, Vladislav E. Bougrov, M. S. Buyalo
Publikováno v:
AIP Conference Proceedings.
We have fabricated passive mode-locked laser diode based on strained InGaAlAs/InGaAs/InP heterostructure with emission wavelength 1550 nm. The laser have demonstrated following characteristics i.e. threshold current was 0.36 A, optical emission power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee9a06975ac9fc594080812e6e1b8cf2
https://doi.org/10.1063/1.4998092
https://doi.org/10.1063/1.4998092
Autor:
V. N. Nevedomskiy, A. P. Vasil’ev, I. M. Gadzhiyev, R. V. Zolotareva, M. S. Buyalo, M. M. Sobolev, Yu. M. Zadiranov, V. M. Ustinov
Publikováno v:
Semiconductors. 48:1031-1035
The polarization anisotropy of electroluminescence and absorption in a ten-layer system of vertically correlated InAs quantum dots separated by 8.6-nm-thick GaAs spacer layers is investigated experimentally. The quantum-dot system is built into a two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87f667ef02d9c95f82dd6b32bcbbce34
https://doi.org/10.1134/s1063782614080235
https://doi.org/10.1134/s1063782614080235
Autor:
A. A. Usikova, A. E. Gubenko, I. M. Gadzhiyev, N. D. Il’inskaya, Yu. M. Zadiranov, M. S. Buyalo, E. L. Portnoi, A. Yu. Egorov
Publikováno v:
Technical Physics Letters. 41:984-986
Two-sectional laser diodes emitting light pulses in Q-switched (QS) mode are investigated. The active region of lasers contains three quantum wells. The shift of absorption edge due to Stark effect leads to red shift of lasing wavelength and pulse po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf79e05ea2aad8d3b76e853e27759d7a
https://doi.org/10.1134/s106378501510020x
https://doi.org/10.1134/s106378501510020x