Zobrazeno 1 - 4
of 4
pro vyhledávání: '"M. S. Boltovets"'
Autor:
S.M Naumenko, T. V. Ostapchuk, V.B Shevchenko, O.I. Dacenko, V. A. Makara, M. S. Boltovets, O. V. Vakulenko, O. V. Rudenko
Publikováno v:
Journal of Luminescence. 81:263-270
Evolution of the integral intensity of the photoluminescence (IIPL) of untreated and treated (48% HF etched) porous silicon (PS) samples is studied in samples stored in the air both in the dark and in daylight. It is established that IIPL of the illu
Autor:
V. A. Makara, O. V. Rudenko, M. S. Boltovets, V.M. Kravchenko, O. V. Vakulenko, O.I. Dacenko, V. O. Fesunenko, T. V. Ostapchuk
Publikováno v:
Thin Solid Films. 312:202-206
The effect of boron diffusion on the microhardness and photoluminescent properties of porous silicon layers obtained conventionally by anode etching is studied. By means of angle lap, it was found that the samples have a three-layer structure: the up
Autor:
V. O. Fesunenko, V. A. Makara, O. V. Rudenko, O. V. Vakulenko, V. I. kryvohyzhyna, M. S. Boltovets, O. I. Datsenko
Publikováno v:
Frontiers in Nanoscale Science of Micron/Submicron Devices ISBN: 9789401072946
Frontiers in Nanoscale Science of Micron/Submicron Devices
Frontiers in Nanoscale Science of Micron/Submicron Devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5620e40fb5315f03af18018be79f2a7
https://doi.org/10.1007/978-94-009-1778-1_29
https://doi.org/10.1007/978-94-009-1778-1_29
Publikováno v:
Scopus-Elsevier
Photoluminescence (PL) spectra of porous silicon (PS) samples are studied. Effect of mechanical stresses in substrate on PL intensity is shown. The quantum yield (QY) of PS luminescence is estimated by comparing PL spectra of PS and rhodamine 6G.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f6d1904ad229ec96fabb2fd0a36b053
http://www.scopus.com/inward/record.url?eid=2-s2.0-0029748226&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0029748226&partnerID=MN8TOARS