Zobrazeno 1 - 10
of 95
pro vyhledávání: '"M. Rouzeyre"'
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 1991, 70 (5), pp.2584-2588. ⟨10.1063/1.349366⟩
Journal of Applied Physics, American Institute of Physics, 1991, 70 (5), pp.2584-2588. ⟨10.1063/1.349366⟩
The growing conditions and the basic electronic and interface properties of InP‐nitride‐metal structures formed by indirect plasma‐enhanced nitridation are reported. The deposited nitride layer PxNyClz is a NP polymer with a chemical compositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f408bf03c1352e85b30871e53ca0f3ab
https://doi.org/10.1063/1.349366
https://doi.org/10.1063/1.349366
Publikováno v:
Physical Review B. 41:1028-1037
Capacitance spectroscopy has been used to study the two dominant deep levels, {ital H}{sub 4} and {ital E}{sub 11}, produced in InP by low-energy electron irradiation. The annealing rates of {ital H}{sub 4} and {ital E}{sub 11} in the {ital p}-type m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c9a08035810adc43cb6515f8e6f0496
https://doi.org/10.1103/physrevb.41.1028
https://doi.org/10.1103/physrevb.41.1028
Publikováno v:
Japanese Journal of Applied Physics
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 1993, 32 (S1), ⟨10.7567/JJAPS.32S1.128⟩
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 1993, 32 (S1), ⟨10.7567/JJAPS.32S1.128⟩
High hydrostatic pressure was used to vary the electron sheet density Ns in a Ga0.7Al0.3 As/GaAs heterojunction (HJ) with applied magnetic fields up to 12 T at 4.2 K. The samples used were n+ GaAs, Al0.3Ga0.7As, p-GaAs, n+ GaAs multilayer capacitors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9951c7dcf799433c80b68ec4ac6b021f
https://hal.archives-ouvertes.fr/hal-01788469
https://hal.archives-ouvertes.fr/hal-01788469
Publikováno v:
Physical review. B, Condensed matter. 42(17)
Optical capacitance spectroscopy and thermal annealing of defects have been used to study both the electron traps ${\mathrm{EP}}_{1}$,${\mathrm{E}}_{11}$ and the dominant hole traps (${\mathrm{H}}_{3}$-${\mathrm{H}}_{4}$-${\mathrm{H}}_{4}^{\ensuremat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11400732f2c0e436a59e0a44846c82d0
https://pubmed.ncbi.nlm.nih.gov/9995383
https://pubmed.ncbi.nlm.nih.gov/9995383
Publikováno v:
Revue de Physique Appliquée
Revue de Physique Appliquée, Société française de physique / EDP, 1977, 12 (11), pp.1755-1766. ⟨10.1051/rphysap:0197700120110175500⟩
Revue de Physique Appliquée, Société française de physique / EDP, 1977, 12 (11), pp.1755-1766. ⟨10.1051/rphysap:0197700120110175500⟩
Nous décrivons le principe de fonctionnement de filtres optiques fonctionnant par transfert d'énergie entre deux modes électromagnétiques couplés polarisés à angle droit. Nous montrons que ce phénomène existe non seulement dans des matériau
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2d9b8448b4629702f9bdc3c0ca285d8
https://doi.org/10.1051/rphysap:0197700120110175500
https://doi.org/10.1051/rphysap:0197700120110175500
Publikováno v:
Journal of Applied Physics. 52:261-268
Data are presented on the characterization of deep electron traps in six different undoped single crystals of CdS and in one alloy of CdS96Se4. The obtained spectra by the capacitance deep level transient spectroscopy (DLTS) of the seven samples are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::595303b177184ed40e3c4b741fc42c74
https://doi.org/10.1063/1.328487
https://doi.org/10.1063/1.328487
Autor:
J. P. Laurenti, M. Rouzeyre
Publikováno v:
Journal of Applied Physics. 52:6484-6493
The uniaxial stress‐induced coupling of the optical ordinary and extraordinary modes in CdS is quantitatively investigated by analyzing, at room temperature, the transmitted light spectrum of a sample placed between two polarizers crossed along the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5246ed27192db3f08127082a4865b5c7
https://doi.org/10.1063/1.328598
https://doi.org/10.1063/1.328598
Publikováno v:
Solid State Communications. 67:1127-1130
Localized defects are investigated in p-CdTe:Cu doped by copper incorporation during Bridgman growth. The results of Hall measurements, admittance spectroscopy and photoluminescence (PL) are similar to those obtained from samples Cu-doped by ion-impl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6156d15a389946b8796361fc820a970d
https://doi.org/10.1016/0038-1098(88)91069-1
https://doi.org/10.1016/0038-1098(88)91069-1
Publikováno v:
Physica B+C. :155-159
We describe the main physical properties of a very deep electron trap which is responsible for the long time persistent photocapacitance of Schottky diodes on undoped CdS single crystals. TSCAP and DLTS have been used to determine the apparent therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02d780af35f1366d9bb941c83af86280
https://doi.org/10.1016/0378-4363(83)90468-0
https://doi.org/10.1016/0378-4363(83)90468-0
Publikováno v:
Physical Review B. 40:3749-3755
The electron-induced irradiated defect ${H}_{5}$ in Zn-doped p-type InP is an unusual hole trap, since its temperature-independent weak-hole capture cross section, ${\ensuremath{\sigma}}_{c}$\ensuremath{\sim}${10}^{\mathrm{\ensuremath{-}}21}$ ${\math
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46e3536669a5079bdabeb530186b77d1
https://doi.org/10.1103/physrevb.40.3749
https://doi.org/10.1103/physrevb.40.3749