Zobrazeno 1 - 10
of 38
pro vyhledávání: '"M. Rodriguez-Girones"'
Autor:
Lorenz-Peter Schmidt, M. Rodriguez-Girones, B. Mottet, Oleg Cojocari, S. Biber, H.L. Hartnagel
Publikováno v:
Semiconductor Science and Technology. 20:23-32
This paper presents results which originated from a long-term systematic optimization of surface processing prior to anode formation of THz Schottky-based components. Particularly, four most promising surface-processing approaches are carefully inves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aafa317858cdecc30bf8677ad6e54c11
https://doi.org/10.1088/0268-1242/20/1/004
https://doi.org/10.1088/0268-1242/20/1/004
Autor:
Lorenz-Peter Schmidt, B. Mottet, G. Rehm, M. Rodriguez-Girones, Hans L. Hartnagel, S. Biber, Oleg Cojocari
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 53:581-587
An automated system is developed to evaluate a large number Schottky diodes for terahertz applications with respect to their dc and noise characteristics using a highly sensitive noise measurement technique for one port devices. An extensive RF switc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42ee087ecc42a3f4433f9e16fee25591
https://doi.org/10.1109/tim.2003.820487
https://doi.org/10.1109/tim.2003.820487
Autor:
Oleg Cojocari, Lorenz-Peter Schmidt, L. Marchand, B. Mottet, S. Biber, M. Rodriguez-Girones, Hans L. Hartnagel
Publikováno v:
Semiconductor Science and Technology. 19:537-542
This paper presents the evaluation of a Schottky contact technology based on electrochemical metal deposition. The results of a long-term systematic investigation and optimization of the anode formation process to improve the yield and performance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37ee97379e44ac557dfb434dd7092406
https://doi.org/10.1088/0268-1242/19/3/045
https://doi.org/10.1088/0268-1242/19/3/045
Autor:
Hans L. Hartnagel, D. Kraft, Ralf Hunger, Wolfram Jaegermann, David Ensling, Victoria M. Ichizli, T. Mayer, M. Rodriguez-Girones
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 200:432-438
Preparation steps of Pt/n-GaAs Schottky contacts as applied in the fabrication process of varactor diode arrays for THz applications are analysed by photoelectron spectroscopy. Pulsed cathodic deposition of Pt onto GaAs (1 0 0) wafer surfaces from ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d14214ce4ef1a49ecfcf15e975dbd072
https://doi.org/10.1016/s0168-583x(02)01735-4
https://doi.org/10.1016/s0168-583x(02)01735-4
Publikováno v:
Microelectronics Reliability. 42:1563-1568
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4e892a930d4273fa14d0141a21cfa9c
https://doi.org/10.1016/s0026-2714(02)00191-9
https://doi.org/10.1016/s0026-2714(02)00191-9
Autor:
B. Mottet, Hans L. Hartnagel, Oleg Cojocari, L. Marchand, C. Garden, M. Rodriguez-Girones, Victoria M. Ichizli
Publikováno v:
Microelectronics Reliability. 42:1593-1596
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97025666e53aa8984d7dd8c72f2c368c
https://doi.org/10.1016/s0026-2714(02)00196-8
https://doi.org/10.1016/s0026-2714(02)00196-8
Publikováno v:
Applied Surface Science. 190:428-436
Basic THz elements are produced by standard semiconductor science and technology. Therefore, three main material systems are used. These are first of all semiconductors, for active and passive layer formation; metals, for interconnect and contact for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::160fcc58c7c9ca799b5b8dd36c00ed25
https://doi.org/10.1016/s0169-4332(01)00914-x
https://doi.org/10.1016/s0169-4332(01)00914-x
Publikováno v:
Materials Science Forum. :173-180
With growing interest in applications in the THz regime, techniques related to THz-devices and circuits become increasingly important. In the frequency range of the so-called submillimeter waves, device dimensions are comparable to the wavelength. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ed1f0306e76ed54a735612b66c1ca1b
https://doi.org/10.4028/www.scientific.net/msf.384-385.173
https://doi.org/10.4028/www.scientific.net/msf.384-385.173
Autor:
Luca Perregrini, Maurizio Bozzi, M. Rodriguez-Girones, Hans L. Hartnagel, M. Saglam, A. Megej
Publikováno v:
International Journal of Infrared and Millimeter Waves. 22:429-438
This paper presents the fabrication and characterization of four-barrier planar heterostructure-barrier-varactors (HBVs) to be used in frequency triplers. The fabrication process and the DC and RF testing results are discussed. The measured results a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a2f7a3a241d973aa03e97df93e53e4e
https://doi.org/10.1023/a:1010745822999
https://doi.org/10.1023/a:1010745822999
Autor:
A. Megej, M. Saglam, B. Schumann, R. Judaschke, C. Domoto, J. Muller, M. Rodriguez-Girones, K. Duwe, Hans L. Hartnagel
Publikováno v:
IEEE Electron Device Letters. 24:138-140
In this letter, we report on the record performance of GaAs-based heterostructure barrier varactors (HBVs) in tripler circuits. Both fabrication technique of planar Al/sub 0.7/Ga/sub 0.3/As/GaAs heterostructure barrier varactors (HBVs) and measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57c95d1297b565b93c0e7c23438551a2
https://doi.org/10.1109/led.2003.809042
https://doi.org/10.1109/led.2003.809042