Zobrazeno 1 - 10
of 33
pro vyhledávání: '"M. Renvoise"'
Autor:
P. Frtjlink, Alessandro Salvucci, Silvio Fenu, M. Renvoise, Walter Ciccognani, Patrick E. Longhi, Sergio Colangeli, Ernesto Limiti, Lorenzo Pace
Publikováno v:
2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring).
In this paper, a times four K- to W-Band frequency multiplier involved in the generation of a Local Oscillator signal is presented. The chosen technology for this design is the D01MH, a metamorphic GaAs mHEMT with a 0.13 µm channel length. The desig
Autor:
R Cleriti, M. Renvoise, Antonio Serino, Ernesto Limiti, Walter Ciccognani, P. Frijlink, Ralf Doerner, Sergio Colangeli, Maruf Hossain
A D-band LNA is reported serving as a test vehicle of an under-development 40 nm GaAs HEMT technology developed by OMMIC foundry. The amplifier, designed on the basis of custom small-signal equivalent-circuit models, is featured by state-of-the-art p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3952a4c421db917543c7a9f6fd51e71e
http://hdl.handle.net/2108/197242
http://hdl.handle.net/2108/197242
Publikováno v:
2016 11th European Microwave Integrated Circuits Conference (EuMIC).
An extensive measurement campaign, including DC curves, S-parameters and noise factor has been carried out on a new 40 nm gate length GaAs mHEMT technology under development by OMMIC. For the first time this technology is presented. A scalable equiva
Autor:
R. Ouhachi, A. Agboton, P. Altuntas, J.C. De Jaeger, Adrien Cutivet, M. Renvoise, Hassan Maher, P. Frijlink, V. Avramovic, S. Bouzid-Driad, Nicolas Defrance
Publikováno v:
43rd Conference on European Solid-State Device Research
43rd Conference on European Solid-State Device Research, Sep 2013, Bucharest, Romania
ESSDERC
43rd Conference on European Solid-State Device Research, Sep 2013, Bucharest, Romania
ESSDERC
International audience; A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considere
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d845b834dd0528d855ac03b482b5e06
https://hal.archives-ouvertes.fr/hal-03285110
https://hal.archives-ouvertes.fr/hal-03285110
Autor:
J.C. De Jaeger, Hassan Maher, Virginie Hoel, Nicolas Defrance, M. Renvoise, P. Frijlink, S. Bouzid-Driad
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, 2013, 34, pp.36-38. ⟨10.1109/LED.2012.2224313⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2013, 34, pp.36-38. ⟨10.1109/LED.2012.2224313⟩
IEEE Electron Device Letters, 2013, 34, pp.36-38. ⟨10.1109/LED.2012.2224313⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2013, 34, pp.36-38. ⟨10.1109/LED.2012.2224313⟩
This letter reports on AlGaN/GaN high-electron-mobility transistors (HEMTs) on high-resistive silicon substrate with a record maximum oscillation cutoff frequency FMAX. Double-T-shaped gates are associated with an optimized technology to enable high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb44032c36edc5bf224032204a40f599
https://hal.science/hal-00796433
https://hal.science/hal-00796433
Autor:
Y. Douvry, Nicolas Defrance, Hassan Maher, M. Renvoise, D. Smith, Virginie Hoel, J.C. De Jaeger, F. Lecourt, S. Bouzid
Publikováno v:
Proceedings of the 40th European Solid-State Device Research Conference, ESSDERC 2010
40th European Solid-State Device Research Conference, ESSDERC 2010
40th European Solid-State Device Research Conference, ESSDERC 2010, 2010, Spain. pp.281-284, ⟨10.1109/ESSDERC.2010.5618362⟩
40th European Solid-State Device Research Conference, ESSDERC 2010
40th European Solid-State Device Research Conference, ESSDERC 2010, 2010, Spain. pp.281-284, ⟨10.1109/ESSDERC.2010.5618362⟩
The fabrication of high transconductance AlGaN/GaN high electron mobility transistors (HEMTs) grown on high-resistivity silicon substrate is reported with an AlGaN barrier thickness of only 12.5 nm. A maximum DC current density of 655 mA/mm, a curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af6fe7f531554bf3aba86ca93157e655
https://hal.science/hal-00549999
https://hal.science/hal-00549999
Autor:
Virginie Hoel, Hassan Maher, F. Lecourt, M. Renvoise, S. Bouzid, J.C. De Jaeger, Nicolas Defrance, D. Smith
Publikováno v:
Proceedings of the 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.111-114, ⟨10.1109/ASDAM.2010.5666316⟩
8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.111-114, ⟨10.1109/ASDAM.2010.5666316⟩
This paper reports the capability of AlGaN/GaN HEMTs on Si (111) substrates for microwave power applications above 30GHz. A current gain cut-off frequency f t =90GHz and a maximum power gain cut-off frequency f max =135GHz are obtained for a 80nm gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ecc546596d055d36cbc6cb459f5a4575
https://hal.archives-ouvertes.fr/hal-00549981
https://hal.archives-ouvertes.fr/hal-00549981
Autor:
M.-G. Perichaud, Hassan Maher, J. Bellaiche, P. Frijlink, I. El Makoudi, U. Rouchy, Pierre Baudet, M. Renvoise
Publikováno v:
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings.
A high DC and RF performance, fully passivated, true enhancement-mode 100 nm MHEMT is demonstrated. This transistor is a good candidate for high performance low noise and low power consumption applications
Autor:
F. Lecourt, Virginie Hoel, M. Renvoise, Nicolas Defrance, J.C. De Jaeger, P. Frijlink, Hassan Maher, S. Bouzid
Publikováno v:
Electronics Letters
Electronics Letters, IET, 2012, 48, pp.69-71. ⟨10.1049/el.2011.3605⟩
Electronics Letters, 2012, 48, pp.69-71. ⟨10.1049/el.2011.3605⟩
Electronics Letters, IET, 2012, 48, pp.69-71. ⟨10.1049/el.2011.3605⟩
Electronics Letters, 2012, 48, pp.69-71. ⟨10.1049/el.2011.3605⟩
A report is presented on high transconductance Gm measured on AlGaN/GaN HEMTs with a 12.5 nm-thick AlGaN barrier layer, grown on high resistivity silicon substrate using the MOCVD growth technique. 105 nm T-gate transistors were successfully fabricat
Publikováno v:
17th European Microwave Conference, 1987.
The purpose of this study is to demonstrate how an improved GaAs design technique associated with an optimised technology, can fulfill the low-cost, high yield objectives required for the industrial exploitation of MMIC's. Two reproductible 3s stage