Zobrazeno 1 - 10
of 48
pro vyhledávání: '"M. Rennau"'
Autor:
Stefan E. Schulz, Ramona Ecke, M. Rennau, Franz Selbmann, Thomas Geβner, Lutz Hofmann, Tobias Fischer, Thomas Werner
This paper discusses approaches for the isolation of deep high aspect ratio through silicon vias (TSV) with respect to a Via Last approach for micro-electro-mechanical systems (MEMS). Selected TSV samples have depths in the range of 170EL270 µm and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f30c8f6d90000dc1b3c94ca4accb518b
https://publica.fraunhofer.de/handle/publica/245035
https://publica.fraunhofer.de/handle/publica/245035
Publikováno v:
Microelectronic Engineering. 84:2606-2609
Looking onto integration of low-k materials within FEOL used processing temperatures in this field are much higher than within BEOL. In addition partly high aspect ratio features have to be filled without defects, e.g. within usage of spin-on low-k m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e21e4c63620674706096d2014a8a7760
https://doi.org/10.1016/j.mee.2007.06.007
https://doi.org/10.1016/j.mee.2007.06.007
Publikováno v:
Solid-State Electronics. 51:650-654
The electron effective mass for direct tunneling (EETM) in silicon dioxide (SiO2) was determined by many authors using a high bias field for obtaining direct measurable direct tunneling current densities (TCDs), leaving some ambiguity to the electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c786b1dd7748c19a444ca08c54657aeb
https://doi.org/10.1016/j.sse.2007.03.009
https://doi.org/10.1016/j.sse.2007.03.009
Autor:
M. Rennau, R. Ebert, Danny Reuter, Christoph Meinecke, A. Bertz, Mathias Müller, Thomas Gessner, H. Exner
Publikováno v:
2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS).
This paper presents a new technology, which allows the reduction of the micro dimensional trench width below the technological limitations of the Deep Reactive Ion Etching (DRIE) process. The high-accuracy and high-throughput femtosecond laser-micro-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::691f9793a273f659d55f3775c43a4410
https://doi.org/10.1109/transducers.2015.7181183
https://doi.org/10.1109/transducers.2015.7181183
Autor:
Thomas Gessner, Dietrich R. T. Zahn, Stefan E. Schulz, Evgeniya Sheremet, Marius Toader, Sascha Hermann, Michael Hietschold, Raul D. Rodriguez, M. Rennau, Holger Fiedler
Display Omitted Growth and characterization of CNT based interconnects.Evaluation of the optimal BEOL-compatible metal-CNT interface.Nitrides provide a low contact resistance at the bottom metallization.A Ta-CNT interface has the lowest contact resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b1ff0bd93cc6c169ce8820f78456c60
https://publica.fraunhofer.de/handle/publica/240375
https://publica.fraunhofer.de/handle/publica/240375
Autor:
Stefan E. Schulz, Cameliu Himcinschi, Marion Friedrich, M. Rennau, Dietrich R. T. Zahn, Rudy Caluwaerts, K. Schulze, Quoc Toan Le, Thomas Gessner, S. Frühauf
Publikováno v:
Microelectronic Engineering. 82:405-410
The target of our investigation is the evaluation of the effect of decreasing thickness on the relative permittivity of dielectric films for high advanced interconnects of IC's. Two kinds of SiCOH-films with similar chemical composition and thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8f0300bc6c32531e5c8c551c6b05d8a
https://doi.org/10.1016/j.mee.2005.07.023
https://doi.org/10.1016/j.mee.2005.07.023
Publikováno v:
Microelectronic Engineering. 70:280-284
The so-called 3ω measurement technique (transient hot wire method) was established to determine the thermal conductivity of thin films. Measurements of standard substrates and films validate the found thermal conductivity values and agree with publi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e83c0817eb1cc264c5b6412fc4e5e6cb
https://doi.org/10.1016/s0167-9317(03)00417-9
https://doi.org/10.1016/s0167-9317(03)00417-9
Publikováno v:
IEEE International Interconnect Technology Conference.
We prepared CNT based vias on wafer scale. Based on the electrical characterization we extracted the localization length of the CNTs. While for short CNTs the classical transport regime is valid, the Anderson localization regime applies for longer CN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b5a637dfd70b1fd7de3f987d87d7f80
https://doi.org/10.1109/iitc.2014.6831852
https://doi.org/10.1109/iitc.2014.6831852
Publikováno v:
Thin Solid Films. 385:126-131
For drift field generation, IS structures with a positive interface charge in an insulator compound were developed in the 1980s and employed mainly on field effect solar cells. While there has been a large number of publications about the positively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a1719988f1f3cf3df99ba79d3a46d63
https://doi.org/10.1016/s0040-6090(00)01926-x
https://doi.org/10.1016/s0040-6090(00)01926-x
Publikováno v:
Solar Energy Materials and Solar Cells. 61:127-134
A solar cell technology with an extremely small thermal budget was developed for MINP cells. MINP solar cells with efficiencies of up to 15.3% have been achieved by rapid thermal processing (RTP). An emitter diffusion process was simulated and develo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ffcff5b804c98f423f19a5852645bae
https://doi.org/10.1016/s0927-0248(99)00105-1
https://doi.org/10.1016/s0927-0248(99)00105-1