Zobrazeno 1 - 10
of 65
pro vyhledávání: '"M. Reischle"'
Autor:
E. Koroknay, Peter Michler, Heinz Schweizer, C. A. Kessler, Robert Roßbach, Michael Jetter, M. Reischle
Publikováno v:
physica status solidi (b). 249:747-751
Single vertically stacked pairs of InP quantum dots (QDs) with different interdot barrier width are investigated using microphotoluminescence, photoluminescence excitation spectroscopy and time-resolved techniques. The results indicate unidirectional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a91ba13b041278f30baf62ad62201136
https://doi.org/10.1002/pssb.201200004
https://doi.org/10.1002/pssb.201200004
Vertically stacked and laterally ordered InP and In(Ga)As quantum dots for quantum gate applications
Autor:
Daniel Richter, Ulrich Rengstl, E. Koroknay, Peter Michler, Moritz Bommer, Wolfgang-Michael Schulz, Michael Jetter, Heinz Schweizer, Robert Roßbach, M. Reischle, C. A. Kessler
Publikováno v:
physica status solidi (b). 249:737-746
We report on the epitaxial growth of vertically stacked InP and In(Ga)As quantum dot (QD) layers to realize a triple dot quantum gate structure consisting of an asymmetric control double dot and a single target dot suitable for a CNOT gate structure.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1fdb8c62e290fb3720d6436bd060625
https://doi.org/10.1002/pssb.201100814
https://doi.org/10.1002/pssb.201100814
Autor:
Michael Jetter, M. Eichfelder, C. A. Kessler, Wolfgang-Michael Schulz, M. Reischle, Robert Roßbach, Peter Michler
Publikováno v:
Journal of Crystal Growth. 315:127-130
We demonstrate electrical pumping of self-assembled InP/Ga 0.51 In 0.49 P quantum dots embedded in a p-i-n resonant-cavity-diode structure with emission in the red spectral region. A high aluminum containing Al 0.98 Ga 0.02 As layer allows wet therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8bc3b7b4410b905123223504f8da70a
https://doi.org/10.1016/j.jcrysgro.2010.08.014
https://doi.org/10.1016/j.jcrysgro.2010.08.014
Autor:
Robert Roßbach, Wolfgang-Michael Schulz, G. J. Beirne, M. Reischle, M. Eichfelder, Peter Michler, Michael Jetter
Publikováno v:
Journal of Crystal Growth. 310:5098-5101
We demonstrate the growth of electrically driven InP/AlGaInP quantum dots embedded in a p–i–n diode structure emitting in the red to orange spectral region at room temperature. We observed an increase in emission wavelength by decreasing the quan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12556dbbf827477c9cac08824a8fc965
https://doi.org/10.1016/j.jcrysgro.2008.07.036
https://doi.org/10.1016/j.jcrysgro.2008.07.036
Autor:
Michael Jetter, Wolfgang-Michael Schulz, Peter Michler, Robert Roßbach, C. Hermannstädter, G. J. Beirne, M. Reischle
Publikováno v:
Journal of Crystal Growth. 310:5089-5092
We demonstrate the growth of InP/GaInP quantum dots on a low density InAs/GaAs island seed layer ( 10 7 cm - 2 ) by metal-organic vapor phase epitaxy. The strain produced by the underlying InAs islands results in a distinct bimodal size distribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8ee0a3a527d065d464899bc1243fa9e
https://doi.org/10.1016/j.jcrysgro.2008.07.084
https://doi.org/10.1016/j.jcrysgro.2008.07.084
Autor:
Wolfgang-Michael Schulz, Michael Jetter, M. Reischle, Peter Michler, G. J. Beirne, Robert Roßbach
Publikováno v:
Journal of Crystal Growth. 298:595-598
InP-quantum dots were grown in between different Al-containing Al x Ga 1-x InP barriers in order to increase their emission energy and localization energy. We observed emission energies from 1.85eV (670 nm) to 2.24eV (554 nm). From time-resolved phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d30bdf22f4db313847039f7a7ee9f70
https://doi.org/10.1016/j.jcrysgro.2006.10.144
https://doi.org/10.1016/j.jcrysgro.2006.10.144
Publikováno v:
Journal of Crystal Growth. 298:603-606
Two layers of differently sized self-assembled InP-quantum dots (QDs) separated by a GaInP spacer layer with varying thickness were grown by metal organic vapor phase epitaxy (MOVPE). Photoluminescence measurements of the QD ensembles and of individu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ec62c757845c30ad60999a9c202990a
https://doi.org/10.1016/j.jcrysgro.2006.10.146
https://doi.org/10.1016/j.jcrysgro.2006.10.146
Autor:
M. Reischle, M. Eichfelder, Robert Roßbach, Wolfgang-Michael Schulz, Peter Michler, M. Wiesner, Michael Jetter
Publikováno v:
Journal of Crystal Growth. 315:131-133
In this letter, we report on laser light emission, in the red spectral range, of electrically pumped self-assembled InP quantum dots which were embedded in a microcavity structure realized by monolithically grown highly reflective AlGaAs distributed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6019fdf077dc8a2e81c54287158cf260
https://doi.org/10.1016/j.jcrysgro.2010.09.073
https://doi.org/10.1016/j.jcrysgro.2010.09.073
Autor:
Robert Roßbach, Michael Jetter, Wolfgang-Michael Schulz, G. J. Beirne, Peter Michler, M. Reischle
Publikováno v:
Journal of Crystal Growth. 310:4818-4820
InP/GaInP quantum dots emitting in the red spectral range have been grown on an AlGaAs distributed Bragg reflector in order to increase the single-photon emission efficiency. We have observed an increase in ensemble photoluminescence by a factor of 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fa985dccecbda5067f61ce6c835d96c
https://doi.org/10.1016/j.jcrysgro.2008.07.039
https://doi.org/10.1016/j.jcrysgro.2008.07.039
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 40:1958-1960
In this work, single vertically stacked asymmetric InP/GaInP quantum dot (QD) pairs that are separated by different barrier widths have been investigated. We have found that for large (20 nm) inter-dot distances no tunneling is possible, that for med
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3331dfc3bc824f9a490b19c47df3fc07
https://doi.org/10.1016/j.physe.2007.09.015
https://doi.org/10.1016/j.physe.2007.09.015