Zobrazeno 1 - 10
of 124
pro vyhledávání: '"M. Ramonas"'
Autor:
E. Šermukšnis, A. Šimukovič, Oleg Kiprijanovič, Linas Ardaravičius, M. Ramonas, Arvydas Matulionis
Publikováno v:
Lithuanian Journal of Physics. 60
High-field electron transport measurements by applying short (few ns) voltage pulses on nominally undoped n-type Zn-polar ZnO epilayers are reported and interpreted in terms of the Boltzmann kinetic equation. The transient measurements do not demonst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4c0bb39dac261db6104a01f0080c476
https://doi.org/10.3952/physics.v60i1.4163
https://doi.org/10.3952/physics.v60i1.4163
Autor:
Vitaliy Avrutin, A. Šimukovič, J. Liberis, Arvydas Matulionis, E. Šermukšnis, Hadis Morkoç, M. Ramonas, Ümit Özgür
Publikováno v:
Journal of Applied Physics. 128:055702
The almost periodic streaming motion of accelerated electrons under moderate electric fields coupled with almost periodic emission of longitudinal optical (LO) phonons is studied in a gallium nitride quantum-well—a promising pathway for terahertz (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38e1366dca1948e6d6d8fd9ea282523e
https://doi.org/10.1063/5.0015257
https://doi.org/10.1063/5.0015257
Autor:
M. Ramonas
Publikováno v:
2017 International Conference on Noise and Fluctuations (ICNF).
Numerical methods for microscopic modeling of electronic fluctuations are considered. A deterministic Boltzmann-Langevin method for simulation of the long-lasting correlations is proposed for a coupled hot-electron-hot-phonon gas in a polar semicondu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bd144fb72ca6459399fcc7444fdb5f6
https://doi.org/10.1109/icnf.2017.7985939
https://doi.org/10.1109/icnf.2017.7985939
Autor:
Christoph Jungemann, M. Ramonas
Publikováno v:
Journal of Computational Electronics. 14:43-50
A deterministic model for electron velocity fluctuations in a non-equilibrium bulk electron---phonon system is presented. The model is based on the spherical harmonics expansion of the system of the two coupled Boltzmann equations for electrons and p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebd3d5a4399534f6da4b1845abb7e606
https://doi.org/10.1007/s10825-014-0627-3
https://doi.org/10.1007/s10825-014-0627-3
Publikováno v:
Lithuanian Journal of Physics. 55
The hot-phonon effect is considered for an Al0.23Ga0.77N/GaN structure with a two-dimensional electron gas subjected to an electric field applied in the plane of electron confinement. The hot-phonon accumulation is taken into account in the hot-phono
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12bb39f442d2b899cb75703c45921ba5
https://doi.org/10.3952/physics.v55i4.3232
https://doi.org/10.3952/physics.v55i4.3232
Autor:
Paulius Sakalas, M. Ramonas, Christoph Jungemann, A. Mukherjee, K. E. Moebus, J. Herricht, Michael Schroter
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 60:3403-3412
A systematic method for the integration of correlated shot-noise sources into compact models (CMs) is presented, which significantly improves the accuracy of predicted high-frequency noise in transistors. The developed method relies on a system theor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::063d00dc542e901a8cd558895ba582e6
https://doi.org/10.1109/tmtt.2012.2216284
https://doi.org/10.1109/tmtt.2012.2216284
Publikováno v:
Proceedings of the IEEE. 98:1118-1126
Dissipation of the Joule heat, accumulated in non-equilibrium longitudinal optical (LO) phonon modes, is considered in terms of LO-phonon lifetime. The dependence of the lifetime on electron density, hot-electron temperature, and supplied electric po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ddf9ccce790b11c9364f4177c9cb702
https://doi.org/10.1109/jproc.2009.2029877
https://doi.org/10.1109/jproc.2009.2029877
Autor:
A. Shimukovitch, Christoph Jungemann, Paulius Sakalas, W. Kraus, Michael Schroter, M. Ramonas
Publikováno v:
IEEE Transactions on Electron Devices. 56:328-336
The noise behavior resulting from impact ionization (II) was investigated at room temperature for silicon-germanium (SiGe) heterojunction bipolar transistors with box Ge profile ("true" HBTs), featuring a maximum transit frequency of fT = 80 GHz. Noi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b3685fc0dc8f330958a3200136a321b
https://doi.org/10.1109/ted.2008.2010578
https://doi.org/10.1109/ted.2008.2010578
Publikováno v:
Acta Physica Polonica A. 113:967-970
The experimental results on transport, noise, and dissipation of electric power for voltage-biased Si-doped GaN channels are compared with those of Monte Carlo simulation. The measured dissipated power shows a stronger hot-phonon effect than the simu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::114c19d7c657598cf0097ee28dfef71d
https://doi.org/10.12693/aphyspola.113.967
https://doi.org/10.12693/aphyspola.113.967
Publikováno v:
Semiconductor Science and Technology. 22:875-879
The ensemble Monte Carlo method is used to solve the Boltzmann equation for electrons together with the equation for phonons treated in the relaxation-time approximation. The effect of nonequilibrium longitudinal optical phonons on hot-electron energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0187e4d672e0ed4104853a344833f307
https://doi.org/10.1088/0268-1242/22/8/008
https://doi.org/10.1088/0268-1242/22/8/008