Zobrazeno 1 - 10
of 14
pro vyhledávání: '"M. Rafiq Beigh"'
Publikováno v:
IEEE Access, Vol 9, Pp 80158-80169 (2021)
In this work, a new structure of Schottky tunneling MOSFET has been designed and simulated. The proposed device structure uses floating gates and dual material main gates to counter short channel effects and to improve RF/Analog figures of merit for
Externí odkaz:
https://doaj.org/article/f94788d60ed4442db44ae3dbc3ad78dd
Publikováno v:
Medical & Biological Engineering & Computing. 61:927-950
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd1db6d81a8dcea36e795ea7211d334a
https://doi.org/10.1007/s11517-022-02763-1
https://doi.org/10.1007/s11517-022-02763-1
Publikováno v:
Materials Today: Proceedings. 74:344-348
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::104058f3a4bb21d0ad3c2a786231c9a2
https://doi.org/10.1016/j.matpr.2022.08.318
https://doi.org/10.1016/j.matpr.2022.08.318
Publikováno v:
IEEE Transactions on NanoBioscience. 21:542-548
In this work, we demonstrate the realization of L-Shaped Schottky Barrier FET as a biosensing device with improved sensitivity. The proposed device uses dual material gate with work functions of 4.2 eV (Al) and 4.8 eV (Cu) and Hafnium Oxide (HfO2) as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2120b13cdba6b570ed33739ff11e851e
https://doi.org/10.1109/tnb.2021.3131372
https://doi.org/10.1109/tnb.2021.3131372
Publikováno v:
Silicon. 15:205-215
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dda648935bc70992d961889ea97515a2
https://doi.org/10.1007/s12633-022-02006-w
https://doi.org/10.1007/s12633-022-02006-w
Publikováno v:
IEEE Access, Vol 9, Pp 80158-80169 (2021)
In this work, a new structure of Schottky tunneling MOSFET has been designed and simulated. The proposed device structure uses floating gates and dual material main gates to counter short channel effects and to improve RF/Analog figures of merit for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3a2cb2ce55ac70b45498939c31749f3
https://ieeexplore.ieee.org/document/9440975/
https://ieeexplore.ieee.org/document/9440975/
Publikováno v:
IEEE transactions on nanobioscience.
In this paper, a novel structure of double gate tunnel FET has been proposed and simulated for biosensing applications. The device uses III-V compound semiconductors and an n+ doped pocket at the source channel junction. Biomolecules of different die
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d99e84d4b78e82cd5eb87ee423ed14ce
https://pubmed.ncbi.nlm.nih.gov/35635823
https://pubmed.ncbi.nlm.nih.gov/35635823
Publikováno v:
2022 International Conference on Electronics and Renewable Systems (ICEARS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a4e0e81ae0e6cb8b3d84df9523b673e
https://doi.org/10.1109/icears53579.2022.9751984
https://doi.org/10.1109/icears53579.2022.9751984
Publikováno v:
International Journal of Digital Signals and Smart Systems. 4:1
Quantum-dot cellular automata (QCA), an advanced nanotechnology, is a branch of nano-electronics that attempts to create general computation at nano scale by controlling the position of electrons. ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ba0f48cbff3d86ffbf281e44d6f95aa
https://doi.org/10.1504/ijdsss.2020.10026090
https://doi.org/10.1504/ijdsss.2020.10026090