Zobrazeno 1 - 10
of 979
pro vyhledávání: '"M. Racanelli"'
Autor:
S. Phillips, E. Preisler, J. Zheng, S. Chaudhry, M. Racanelli, M. Muller, M. Schroter, W. McArthur, D. Howard
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c39594cc92f89b1d0437f088c55545be
https://doi.org/10.1109/bcicts50416.2021.9682485
https://doi.org/10.1109/bcicts50416.2021.9682485
Publikováno v:
Microelectronics Reliability. 52:2568-2571
The radio frequency (RF) characteristics of proton irradiated large-area silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) at extreme temperatures (liquid nitrogen temperature of 77 K and high temperature of ∼430 K) are reported
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e74f5ec907b11c580167f107051b8eb0
https://doi.org/10.1016/j.microrel.2012.03.027
https://doi.org/10.1016/j.microrel.2012.03.027
Autor:
Baj, Jacek1 (AUTHOR) jacek.baj@umlub.pl, Kołodziej, Magdalena2 (AUTHOR) magdalenakolodziej502@gmail.com, Kobak, Joanna2 (AUTHOR) kobak.joannaelzbieta@gmail.com, Januszewski, Jacek1 (AUTHOR) jacek.januszewski000@gmail.com, Syty, Kinga3 (AUTHOR) kinga.syty@kul.pl, Portincasa, Piero4 (AUTHOR) piero.portincasa@uniba.it, Forma, Alicja2 (AUTHOR) 54843@student.umlub.pl
Publikováno v:
International Journal of Molecular Sciences. Oct2024, Vol. 25 Issue 19, p10233. 20p.
Autor:
Ghadrdoost Nakhchi, Behshid1 (AUTHOR) bghadrdoostnakhchi@versiti.org, Kosuru, Ramoji1 (AUTHOR), Chrzanowska, Magdalena1,2,3,4 (AUTHOR) mchrzanowska@versiti.org
Publikováno v:
International Journal of Molecular Sciences. Sep2024, Vol. 25 Issue 18, p9853. 21p.
Autor:
Rahman, Md Ataur1 (AUTHOR) rahman23@wayne.edu, Ali, Meser M.1 (AUTHOR) rahman23@wayne.edu
Publikováno v:
Cancers. Sep2024, Vol. 16 Issue 17, p2975. 24p.
Publikováno v:
2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS).
SOI processes have become the mainstream technology for wireless front end manufacturing following recent optimization of starting materials and fabrication processes. In this paper, we will describe such RFSOI platform for RF switches, the process o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48ea8710368363ebb73db1ac691f3fa4
https://doi.org/10.1109/comcas.2015.7360403
https://doi.org/10.1109/comcas.2015.7360403
Publikováno v:
Semiconductor Science and Technology. 22:S144-S148
Through 1D device simulations it has been shown that there is some advantage to engineering the shape of the collector profile in SiGe HBT's but only in certain regimes. Power law profiles are shown to be superior to a flat profile only for low break
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::065c3b271648f724ed6b5454c73bd2ec
https://doi.org/10.1088/0268-1242/22/1/s34
https://doi.org/10.1088/0268-1242/22/1/s34
Publikováno v:
Semiconductor Science and Technology. 22:S68-S71
In summary, thermal resistance of SiGe HBT at different power densities is characterized for the first time, revealing the decreasing trend of thermal resistance with increased dissipated power in the devices. The different behavior of thermal resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33898cd996013a566ebe8e330bd1c195
https://doi.org/10.1088/0268-1242/22/1/s16
https://doi.org/10.1088/0268-1242/22/1/s16
Publikováno v:
Semiconductor Science and Technology. 22:S46-S49
The performance of SiGe HBTs has been dramatically improved due to scaling and device structure optimization. This work reports the proton radiation effects on SiGe power HBTs manufactured in a commercial BiCMOS process. Besides DC and small-signal A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f33d00d3ac1deed1f2e6bee919ce0e67
https://doi.org/10.1088/0268-1242/22/1/s11
https://doi.org/10.1088/0268-1242/22/1/s11
Publikováno v:
ECS Transactions. 3:919-925
The effects of proton irradiation on device modeling of SiGe power HBTs are investigated in this work. On-wafer DC, small- signal AC, linearity and large-signal load-pull measurements were performed before and after proton irradiation. Minor degradat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc0a3af67924bda8cf536cf91b09f911
https://doi.org/10.1149/1.2355886
https://doi.org/10.1149/1.2355886