Zobrazeno 1 - 10
of 77
pro vyhledávání: '"M. R. Murti"'
Autor:
M. R. Murti, K. V. Reddy
Publikováno v:
physica status solidi (a). 119:237-240
Electrical conductivity and Hall effect measurements are performed on solar grade bulk polycrystalline silicon of grain size ≈ 1 mm in the temperature range 85 to 550 K. The mobility is found to vary as ∼ T−2.2 above 250 K characteristic of lat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b61a66656b9875efb490578598fe597
https://doi.org/10.1002/pssa.2211190128
https://doi.org/10.1002/pssa.2211190128
Publikováno v:
Journal of Applied Physics. 78:578-580
InxGa1−xAs/InyAl1−yAs based light‐emitting diodes emitting in the wavelength range 1.7–1.9 μm have been grown nonlattice matched on GaAs. Electroluminescence spectra are measured at 77 K and the injection level dependence has been studied. M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3c362b08aee2941cb21c0d39a1cb8f7
https://doi.org/10.1063/1.360574
https://doi.org/10.1063/1.360574
Publikováno v:
Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9).
In this paper, the authors investigate the use of lifetime measurements as a tool to monitor high-efficiency silicon solar cell processes. Contactless lifetime measurements are carried out after every processing step for monocrystalline float zone wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::876b0890e43da8fa2e929fe371b23dbf
https://doi.org/10.1109/pvsc.1993.347161
https://doi.org/10.1109/pvsc.1993.347161
Publikováno v:
Applied Physics Letters. 63:2171-2173
Hydrogen passivation is found very effective in improving the quality of electromagnetically cased (EMC) multicrystalline silicon from Osaka Titanium Co. (OTC), now Sumitomo Sitix Corp.), due to its small grain size and low oxygen content. A top effi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56d85c44fec36c17a0fa157144436d35
https://doi.org/10.1063/1.110574
https://doi.org/10.1063/1.110574
Autor:
K. V. Reddy, M. R. Murti
Publikováno v:
SPIE Proceedings.
Diffusion of phosphorus in polycrystalline silicon is carried out from POC1 3 source at 1000 degree(s)C for 1 hour. The diffusion profiles were obtained and were analyzed to get diffusivity as a function of concentration.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::199fd5a3252409ec1aacdb78b8359822
https://doi.org/10.1117/12.57028
https://doi.org/10.1117/12.57028
Autor:
K. V. Reddy, M. R. Murti
Publikováno v:
IndraStra Global.
An experimental investigation of the influence of grain boundaries on the recombination of photogenerated minority carriers in polysilicon is reported here. Spatial dependence of photoconductance across an isolated grain boundary was utilized to eval
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e899b36b18a1b4cc5e2a12ec9ce1036
https://igi.indrastra.com/items/show/69667
https://igi.indrastra.com/items/show/69667
Publikováno v:
Electronics Letters. 31:502-503
InGaAs-InAlAs light-emitting diodes were grown on lattice-mismatched GaAs substrates by molecular beam epitaxy. This makes it possible to tune the emission to the desired wavelength by changing the composition of the grown layers. The authors' diodes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b92d5ea0ee03d907fc530ea08284648
https://doi.org/10.1049/el:19950325
https://doi.org/10.1049/el:19950325
Publikováno v:
Semiconductor Science and Technology. 4:622-625
Diffusion of radioactive phosphorus in polycrystalline silicon has been studied in the temperature range 566-980 degrees C. Diffusion profiles were obtained by anodic oxidation sectioning coupled with radio tracer detection. Diffusion coefficients in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de37b5e4f82a4aa3e1975c190923bf79
https://doi.org/10.1088/0268-1242/4/8/004
https://doi.org/10.1088/0268-1242/4/8/004
Publikováno v:
IOP Conference Series: Materials Science & Engineering; Jun2019, Vol. 539 Issue 1, p1-1, 1p
Publikováno v:
IOP Conference Series: Materials Science & Engineering; Jun2019, Vol. 539 Issue 1, p1-1, 1p