Zobrazeno 1 - 10
of 78
pro vyhledávání: '"M. R. Melloch"'
Autor:
Jan Siegel, Y. Gu, Z. Ansari, Paul M. W. French, D. Parsons-Karavassilis, M. R. Melloch, M. Itoh, W. Headley, Christopher Dunsby, David D. Nolte
Publikováno v:
Journal of Modern Optics. 49:877-887
The paper reports recent progress in developing high speed 3D imaging systems based on low coherence photorefractive holography with high-speed depth-sectioned imaging at 476 frames per second. It is demonstrated that photorefractive holography can u
Publikováno v:
Journal of Applied Physics. 90:5637-5641
A study of nonalloyed ohmic contact structures consisting of Au/Ti metallization deposited on a thin (3.5–5 nm) layer of low-temperature-grown GaAs (LTG:GaAs) on a thin (10 nm) layer of heavily doped n-type GaAs is summarized. We demonstrate that t
Autor:
Y. Gu, M. Itoh, M. R. Melloch, Z. Ansari, Paul M. W. French, Christopher Dunsby, Richard Jones, M. Tziraki, D. Parsons-Karavassilis, David D. Nolte, Jan Siegel, W. Headley
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 7:878-886
In this paper, we briefly review our work on low-coherence photorefractive holography and report on the current state of the art. We present what is, to the best of our knowledge, the fastest-ever three-dimensional (3-D) imaging system and present re
Publikováno v:
Journal of Applied Physics. 88(10):6016-6020
The influence of electronic states of the semiconductor matrix on the precipitation of metallic As clusters in GaAs epilayers grown by molecular beam epitaxy at low temperatures were studied. From x-ray diffraction and Hall effect measurements, the p
Publikováno v:
Scopus-Elsevier
We present a quantitative conduction model for nonalloyed ohmic contacts to n-type GaAs (n:GaAs) which employ a surface layer of low-temperature-grown GaAs (LTG:GaAs). The energy band edge profile for the contact structure is calculated by solving Po
Publikováno v:
Physical Review B. 60:10926-10934
The superlattice intermixing of arsenic-rich nonstoichiometric AlAs/GaAs quantum wells grown at lowsubstrate temperatures around 300 °C is enhanced by several orders of magnitude relative to diffusion in stoichiometric structures grown at ordinary s
Autor:
M. R. Melloch, Mercedes Carrascosa, David D. Nolte, Fernando Agulló-López, María Aguilar, Fernando Agulló-Rueda
Publikováno v:
Journal of Applied Physics. 86:3822-3825
Electroabsorption has been investigated in semi-insulating asymmetric GaAs/AlGaAs double quantum wells presenting high linear Stark responses, adequate for photorefractive applications. We have used the envelope function approximation to calculate th
Autor:
David D. Nolte, M. R. Melloch, Richard Jones, S.C.W. Hyde, Paul M. W. French, M. Tziraki, N.P. Barry, K. M. Kwolek, J. C. Dainty
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 4:360-369
We discuss a real-time coherence gated three-dimensional (3-D) imaging system, based on photorefractive holography with ultrashort pulses, which has been applied to imaging through turbid media with a view to developing biomedical instrumentation. Su
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 4:332-341
Coded ultrafast optical pulses can be treated as one-dimensional (1-D) images in the time domain. We have converted spare-domain images into time-domain images using diffraction from dynamic holograms inside a Fourier pulse shaper, with photorefracti
Publikováno v:
IEEE Journal of Quantum Electronics. 33:2150-2158
The diffraction of 100-fs pulses from the static gratings of photorefractive quantum wells (QWs) produces diffracted pulses that are nearly transform-limited, despite the strong dispersion near the quantum-confined excitonic transitions. This quality