Zobrazeno 1 - 10
of 492
pro vyhledávání: '"M. R Gokhale"'
Autor:
Mandar M. Deshmukh, A. Azizur Rahman, Arnab Bhattacharya, M. R. Gokhale, Nirupam Hatui, Priti Gupta
Publikováno v:
Journal of Crystal Growth. 372:105-108
We report the growth and characterization of group III-nitride semiconductor layers on graphene grown by chemical vapour deposition. GaN, AlGaN alloys, and InN layers are grown using an AlN nucleation and a buffer layer. We investigate the effect of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb2bbc54a9c7133985b35079ebd3ac9f
https://doi.org/10.1016/j.jcrysgro.2013.03.020
https://doi.org/10.1016/j.jcrysgro.2013.03.020
Autor:
A.P. Shah, M. R. Gokhale, Arnab Bhattacharya, A. Azizur Rahman, Masihhur R. Laskar, Nirupam Hatui, Tapas Ganguli, Abdul Kadir
Publikováno v:
Journal of Crystal Growth. 315:233-237
We report a comparative study of the microstructure of a-plane (1 1 2 0) InN epilayers grown on different buffer layers via metalorganic vapour phase epitaxy. Under optimized growth conditions, the crystalline quality of the InN epilayer is found to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d7d96a81a146b8d131dd3be3cb5af36
https://doi.org/10.1016/j.jcrysgro.2010.08.019
https://doi.org/10.1016/j.jcrysgro.2010.08.019
Autor:
A. Azizur Rahman, Arnab Bhattacharya, Nirupam Hatui, Abdul Kadir, A.P. Shah, Masihhur R. Laskar, M. R. Gokhale
Publikováno v:
Journal of Crystal Growth. 312:2033-2037
We have performed a comprehensive investigation of the growth parameter space for the MOVPE of a- plane (11 20) InN on a-plane GaN buffer layers deposited on r-plane (1 102) sapphire substrates. About 0:2 m thick a-plane InN epilayers were grown on 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc1e5d93163a6efe87ef2ec83c56c0c9
https://doi.org/10.1016/j.jcrysgro.2010.03.042
https://doi.org/10.1016/j.jcrysgro.2010.03.042
Publikováno v:
physica status solidi (a). 207:1070-1073
A detailed study on the influence of an InGaN interlayer between the GaN buffer and InN epilayer on the microstructural properties of the InN layer is reported. Using high-resolution X-ray diffraction measurements the mosaicity of MOVPE grown InN epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7ace543a94fd20926cf1e1892569d9b
https://doi.org/10.1002/pssa.200983113
https://doi.org/10.1002/pssa.200983113
Publikováno v:
Journal of Crystal Growth. 311:95-98
We report on the growth of InN/GaN quantum well structures via metal organic vapour-phase epitaxy. From X-ray diffraction and transmission electron microscopy measurements we find that at 530 °C, the temperature optimal for InN growth, the quality o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4e23df3e789c93fa337ebca39b15a7e
https://doi.org/10.1016/j.jcrysgro.2008.10.056
https://doi.org/10.1016/j.jcrysgro.2008.10.056
Publikováno v:
physica status solidi (b). 245:2567-2571
We report investigation of electron traps in n-GaN, grown on sapphire by metal organic vapour phase epitaxy, by using charge deep level transient spectroscopy (Q -DLTS). Measurements have been made isothermally by rate window scanning over the temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8906e356f17213fb5681abbedf5325af
https://doi.org/10.1002/pssb.200844243
https://doi.org/10.1002/pssb.200844243
Autor:
K.L. Narasimhan, M. R. Gokhale, Neysha Lobo, Brij M. Arora, Abdul Kadir, Arnab Bhattacharya, Masihhur R. Laskar, A. Azizur Rahman, A.P. Shah
Publikováno v:
Journal of Crystal Growth. 310:4747-4750
In this work we have compared the sub-bandgap absorptance of nominally undoped GaN samples grown under different conditions. The absorptance is measured using standard transmission measurements and transverse photothermal deflection spectroscopy (PDS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfb755febc92fc8947b948e0da9f134b
https://doi.org/10.1016/j.jcrysgro.2008.08.022
https://doi.org/10.1016/j.jcrysgro.2008.08.022
Autor:
A.P. Shah, Amlan Majumdar, M. R. Gokhale, Arnab Bhattacharya, Sandip Ghosh, D. Sengupta, Brij M. Arora
Publikováno v:
Infrared Physics & Technology. 50:206-210
Higher responsivity of quantum well infrared photodetectors based on In0.53Ga0.47As–InP material system compared to the well established GaAs–AlGaAs material system is analyzed. It is shown that the higher responsivity of the former results mainl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::471e6836dc6475c54c0a72896941f9bb
https://doi.org/10.1016/j.infrared.2006.10.002
https://doi.org/10.1016/j.infrared.2006.10.002
Publikováno v:
Journal of Crystal Growth. 298:586-590
This paper examines the optical properties of self-assembled InAs/InP quantum dots grown by metalorganic vapour phase epitaxy (MOVPE). In a non-equilibrium regime of relatively low temperature (⩽450 °C) and higher growth rates (⩾1.5 monolayers/s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da79b88c6be0b5853400fa0c13d7afe0
https://doi.org/10.1016/j.jcrysgro.2006.10.154
https://doi.org/10.1016/j.jcrysgro.2006.10.154
Publikováno v:
Radiation Effects and Defects in Solids. 161:433-442
The effects of bombardment of 250 keV argon ions in n-type GaSb at fluences 2×1015 and 5×1015 ions cm−2 were investigated by high-resolution X-ray diffraction (HRXRD), Fourier transform infrared (FTIR) and scanning electron microscopy (SEM). HRXR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::534e72eff194e5142c26e328cea38d69
https://doi.org/10.1080/10420150600764405
https://doi.org/10.1080/10420150600764405