Zobrazeno 1 - 10
of 43
pro vyhledávání: '"M. Q. Huda"'
Publikováno v:
World Journal of Nuclear Science and Technology. :129-135
In reactor physics tests, it is important to monitor sub-criticality continuously during criticality approach. Reactivity measurements by the inverse kinetics method are widely used during the operation of a nuclear reactor. This technique is success
Publikováno v:
World Journal of Nuclear Science and Technology. :145-154
A design for instantaneous neutron flux signal acquisition system is being carried out for reactivity measurement of the nuclear research reactor. It is a computer-based digital data acquisition system that can perform continuous monitor and measurem
Publikováno v:
Journal of Microelectromechanical Systems. 24:1565-1574
In this paper, we present the design, fabrication, and characterization of a long-arm comb-drive actuator with an externally mounted large mirror for optical applications. The provision for an externally mounted mirror can be useful for many optical
Publikováno v:
Sensors & Transducers, Vol 183, Iss 12, Pp 65-71 (2014)
In this paper, the design, fabrication, and characterization of a virtual pivot point micro electromechanical systems (MEMS) electrostatic actuator with externally mounted mirror is presented. The point of rotation of the movable arm of the actuator
Autor:
M. Q. Huda, K. Sakamoto
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 216:20-24
Selective elevation of silicon on Si/SiO2 patterned structures has been achieved through an implantation mediated selective etching process. 100 nm thick epitaxial silicon/polysilicon layers were formed on patterned structures through conventional ch
Autor:
M. Q. Huda, S.I Ali
Publikováno v:
Materials Science and Engineering: B. 105:146-149
Prospects of stimulated emission from erbium in silicon have been analyzed by a Shockley–Read–Hall (SRH) model. A two-level system was considered for calculation of optical gain and the laser threshold. For an optical cavity of 300 μm with mirro
Publikováno v:
Microelectronic Engineering. 60:457-467
Performance of novel Pd/Sn and Pd/Sn/Au Ohmic metallizations to n-GaAs have been investigated. Metallizations were deposited using a resistance heating evaporator and annealings were performed utilizing a conventional graphite strip annealer (cGSA).
Autor:
K Sakamoto, M. Q. Huda
Publikováno v:
Materials Science and Engineering: B. 89:378-381
The prospect of Erbium silicide (ErSi2) contacts for source/drain metallization in ultra-thin n-channel silicon-on-insulator (SOI) MOSFETs have been studied. Very thin layer of ErSi2 was formed on Si(001) by Er deposition followed by in situ annealin
Autor:
M. Q. Huda, Anthony R. Peaker
Publikováno v:
Solid-State Electronics. 45:1927-1930
Erbium has been incorporated in strained Si/Si 0.87 Ge 0.13 /Si multiple quantum well structures with a density of 10 18 cm −3 . The process of ion implantation was used. Samples were amorphized by silicon implantation at liquid nitrogen temperatur
Publikováno v:
Nuclear Technology. 135:51-66
Important thermal-hydraulic parameters of the 3-MW TRIGA MARK-II research reactor operating under both steady-state and transient conditions are reported. Neutronic analyses were performed by using...