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of 91
pro vyhledávání: '"M. Popadic"'
Akademický článek
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Publikováno v:
Solid-State Electronics. 54:890-896
A novel C–V profiling method that enables profiling of ultra-shallow and ultra-abrupt junctions is described. The method takes advantage of a peculiar shape of the C–V characteristic that is obtained with a step-like or some other abruptly changi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb0b1213f3ad95e296bc2537a68fe671
https://doi.org/10.1016/j.sse.2010.04.028
https://doi.org/10.1016/j.sse.2010.04.028
Autor:
S. Milosavljevic, L.C.N. de Vreede, Lis K. Nanver, G. Lorito, Hugo Schellevis, E.J.G. Goudena, M. Popadic, V. Gonda, Cong Huang, L. La Spina, F. Sarubbi, Koen Buisman, T.L.M. Scholtes
Publikováno v:
IEEE Journal of Solid-State Circuits. 44:2322-2338
This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted silicon-on-glass (SOG) substrate-transfer technology (STT) developed at DIMES. In this techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c99b79f4ab55c2699d1034f51ce4bf8e
https://doi.org/10.1109/jssc.2009.2023016
https://doi.org/10.1109/jssc.2009.2023016
Autor:
M. Marchetti, F. Sarubbi, M. Popadic, L.C.N. de Vreede, Hugo Schellevis, Koen Buisman, Lis K. Nanver, Lawrence E. Larson, Cong Huang, T.L.M. Scholtes
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 57:205-215
Two linear low-loss varactor configurations for tunable RF applications are compared. The wide tone-spacing varactor stack provides the best linearity for signals with relative large tone spacing like receiver jammer situations. The narrow tone-spaci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43701bb743743cba5056af1a4e8ab504
https://doi.org/10.1109/tmtt.2008.2008978
https://doi.org/10.1109/tmtt.2008.2008978
Akademický článek
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Autor:
Koen Buisman, Lawrence E. Larson, Cong Huang, L.C.N. de Vreede, Hugo Schellevis, T.L.M. Scholtes, M. Popadic, F. Sarubbi, Lis K. Nanver
Publikováno v:
IEEE Microwave and Wireless Components Letters. 18:749-751
A multistacked varactor is presented for ultra-linear tunable radio frequency applications. The varactor elements are applied in anti-series configuration and are characterized by an "exponential" C-VR relationship. Third-order intermodulation (IM3)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4fe9ad78c52d616995fad4a1dc9243a
https://doi.org/10.1109/lmwc.2008.2005234
https://doi.org/10.1109/lmwc.2008.2005234
Autor:
Parastoo Maleki, S. Milosavljevic, Lis K. Nanver, G. Lorito, W.B. de Boer, M. Popadic, F. Sarubbi, T.L.M. Scholtes
Publikováno v:
2010 International Workshop on Junction Technology Extended Abstracts.
This paper presents a new method of supplying the high doses of boron needed for creating several micron deep p+n junctions. Chemical vapor deposition (CVD), in a Si/SiGe epitaxial reactor, of nanometer-thick pure boron layers is used to fabricate 5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5f2e215be8647b4c890d2e0bf2f8538
https://doi.org/10.1109/iwjt.2010.5474973
https://doi.org/10.1109/iwjt.2010.5474973
Publikováno v:
IEEE Transactions on Electron Devices, 56 (1), 2009
For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending on the junction depth, electrical characteristics of ultrashallow p-n junctions can vary from the characteristics of standard Schottky diodes to stan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0be60ef20a91888baae2ba79e2970080
http://resolver.tudelft.nl/uuid:5f28db46-5b7b-4444-89b0-1b84db666fa9
http://resolver.tudelft.nl/uuid:5f28db46-5b7b-4444-89b0-1b84db666fa9
Autor:
T.L.M. Scholtes, S. Milosavljevic, F. Sarubbi, V. Gonda, Koen Buisman, Lis K. Nanver, L.C.N. de Vreede, Hugo Schellevis, E.J.G. Goudena, M. Popadic, G. Lorito, Cong Huang, L. La Spina
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
This paper reviews special RF/microwave silicon device implementations in the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a78733af43b771958c5244dab0033f7
https://doi.org/10.1109/bipol.2008.4662707
https://doi.org/10.1109/bipol.2008.4662707
Autor:
Hugo Schellevis, Koen Buisman, E.J.G. Goudena, M. Popadic, S. Milosavljevic, V. Gonda, T.L.M. Scholtes, L. La Spina, Lis K. Nanver, G. Lorito, Yann Civale, F. Sarubbi
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
This paper reviews several novel process modules developed for the processing of the backside of the wafer of our substrate-transfer technology called back-wafer-contacted silicon-on-glass (SOG), which is in use for fabricating RF/microwave devices s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d5153227ddb906ca5803d7346409969
https://doi.org/10.1109/icsict.2008.4734758
https://doi.org/10.1109/icsict.2008.4734758