Zobrazeno 1 - 10
of 61
pro vyhledávání: '"M. Pilkuhn"'
Publikováno v:
physica status solidi (a). 204:914-922
Department of Physics, Stuttgart University, Stuttgart, Germany Received 5 June 2006, revised 18 October 2006, accepted 18 October 2006 Published online 22 January 2007 PACS 72.70.+m, 81.05.Ea, 85.30.De, 85.30.Tv We report experimental investigation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fabb968e9f6b87e33f89247672f6875
https://doi.org/10.1002/pssa.200622271
https://doi.org/10.1002/pssa.200622271
Publikováno v:
Journal of Crystal Growth. 298:840-842
High-resolution X-ray diffraction (HRXRD) study of laser debonded AlGaN/GaN high electron mobility transistors (HEMTs), grown by metal-organic chemical vapor deposition (MOCVD), is performed. The lattice parameters as well as the in-plane and out-of-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::882ed819ef903f78c5f1767c6ebb837f
https://doi.org/10.1016/j.jcrysgro.2006.10.112
https://doi.org/10.1016/j.jcrysgro.2006.10.112
Publikováno v:
AIP Conference Proceedings.
In this paper we present experimental results on the development of high‐performance GaN LEDs and HEMTs by laser‐assisted debonding of the sapphire substrates from the GaN active layer. Detailed discussions on the process and characterizations of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::823889afae2ce8e0169dbcbbf59904d7
https://doi.org/10.1063/1.2759655
https://doi.org/10.1063/1.2759655
Autor:
K. Y. Tong, Charles Surya, M. Pilkuhn, Heinz Schweizer, S. K. Jha, Chang Fei Zhu, E. Jelenkovic
Publikováno v:
SPIE Proceedings.
We report systematic investigations on hot-electron degradation in GaN-based HEMTs with different gate recess depths, d r , fabricated by reactive ion etching. The experimental data stipulate two different mechanisms underlying the hot-electron degra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::081bd7093147f57157f8df0641829833
https://doi.org/10.1117/12.609283
https://doi.org/10.1117/12.609283
Autor:
C. F. Zhu, H. Schweizer, M. Pilkuhn, Emil V. Jelenković, S. Jha, Charles Surya, J. Gao, K. Y. Tong
Publikováno v:
AIP Conference Proceedings.
Hot‐electron degradation in MOCVD‐grown GaN‐based HEMTs, with different gate recess depths, was monitored by flicker noise measurement. Drastic changes were observed in the flicker noise power spectral density, SV(f) and I‐V characteristics w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b51545f85c94190c12475507d30fda4
https://doi.org/10.1063/1.2036753
https://doi.org/10.1063/1.2036753
Publikováno v:
Proceedings 2001 IEEE Hong Kong Electron Devices Meeting (Cat. No.01TH8553).
Summary form only given. III-V nitride semiconductors have attracted a great deal of attention in the last decade, especially for optical devices such as blue laser diodes and high frequency, high power and high temperature electronic devices such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fb900ad49388674a0e3bfff747b046b
https://doi.org/10.1109/hkedm.2001.946905
https://doi.org/10.1109/hkedm.2001.946905
Autor:
S. Nagel, M. Pilkuhn, F. Barth, E P O'Reilly, Heinz Schweizer, Christian Geng, G G Forstmann, F. Scholz
Publikováno v:
Proceedings of IEEE 14th International Semiconductor Laser Conference.
Summary form only given. An anistropy of GaInP lasers with CuPt-type superlattice was observed in polarization of laser emission. This effect can be understood with direction dependent transition matrix elements. A XCCL device is used for testing ani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b53a500ae37f9ae249981a901cb7547
https://doi.org/10.1109/islc.1994.519165
https://doi.org/10.1109/islc.1994.519165
Publikováno v:
IEEE Journal of Quantum Electronics. 21:719-725
An excellent quantitative description of the temperature dependence of the laser threshold current density and of the relevant T o value of GaInAsP/InP 1.3 μm lasers has been reached by independent measurements of the recombination coefficients and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc6902008e72958873160ec764eb933c
https://doi.org/10.1109/jqe.1985.1072716
https://doi.org/10.1109/jqe.1985.1072716
Publikováno v:
Journal of Luminescence. 30:67-81
We present two new optical techniques for the investigation of the transport properties of ambipolar plasmas in semiconductors. The first method is a time-of-flight technique: Using surface doping with shallow impurities which provide a characteristi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c852a49c024eee9aba0d733c7ab841e4
https://doi.org/10.1016/0022-2313(85)90044-4
https://doi.org/10.1016/0022-2313(85)90044-4
Publikováno v:
Physical Review. 138:A1551-A1561
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a99313ac3f6c14c786566a4d423e222a
https://doi.org/10.1103/physrev.138.a1551
https://doi.org/10.1103/physrev.138.a1551