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pro vyhledávání: '"M. Pessa"'
Akademický článek
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Autor:
Roberto Macaluso, T. Jouhti, David Burns, Kimberley C. Hall, Gareth J. Valentine, Stephane Calvez, M. Pessa, Kenan Gundogdu, Martin D. Dawson, T. F. Boggess, Handong Sun
Publikováno v:
Journal of Applied Physics. 96:1418-1424
We report studies of the effect of rapid thermal annealing (RTA) on the optical properties of a low-loss 1.3 mum saturable Bragg reflector (SBR), consisting of a GaInNAs/GaAs single quantum well embedded in an AlAs/GaAs Bragg reflector grown monolith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58f09d36342a2fb816eef66f56666825
https://doi.org/10.1063/1.1767612
https://doi.org/10.1063/1.1767612
Autor:
Martin D. Dawson, S.A. Smith, T. Jouhti, Handong Sun, T. F. Boggess, Kimberley C. Hall, Stephane Calvez, Kenan Gundogdu, Roberto Macaluso, M. Pessa, John-Mark Hopkins, A.H. Clark
Publikováno v:
Journal of Crystal Growth. 268:457-465
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices namely VCSELs, VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4 mW of 1290 nm output power can be fibre-coupled from a VCSE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::037b2e2c3ea2e7a9436ee269e769a5aa
https://doi.org/10.1016/j.jcrysgro.2004.04.072
https://doi.org/10.1016/j.jcrysgro.2004.04.072
Autor:
J. Tommila, Andreas Schramm, Mircea Guina, Risto Ahorinta, M. Pessa, Jukka Viheriälä, Mihail Dumitrescu, Antti Tukiainen, Arto Aho
Publikováno v:
Journal of Crystal Growth. 323:201-205
We report a comparative study on selective epitaxy of nanostructures with different geometrical shapes. GaAs pyramids were grown by molecular beam epitaxy into circular holes, L-shaped holes, and cross-shaped holes, patterned using nanoimprint lithog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3108feb9fa9b31679fcd303a55a1425c
https://doi.org/10.1016/j.jcrysgro.2010.12.084
https://doi.org/10.1016/j.jcrysgro.2010.12.084
Autor:
Pekka Laukkanen, Karina Schulte, Johan Adell, M. Ahola-Tuomi, Janusz Kanski, I. J. Vayrynen, Kalevi Kokko, Levente Vitos, Mikhail Kuzmin, Johnny Dahl, Marko Patrick John Punkkinen, Mircea Guina, J. Lang, M. Pessa, Mikko Tuominen, R.E. Perälä, Janusz Sadowski, Börje Johansson, V. Tuominen
Publikováno v:
Surface Science
Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daf26e6795810006bae7a23cd957bfe7
https://doi.org/10.1016/j.susc.2011.01.034
https://doi.org/10.1016/j.susc.2011.01.034
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 42:2610-2613
Self-assembled InAs quantum dots (QDs) have been incorporated into GaAs Schottky diodes. We intentionally introduce defects by growing the QDs above the critical thickness for plastic relaxation. The strain-relaxed QDs introduce electrically active d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::862581d944dcbb25455dbd8ea58a4d06
https://doi.org/10.1016/j.physe.2009.10.058
https://doi.org/10.1016/j.physe.2009.10.058
Autor:
Santiago M. Olaizola, M. Pessa, Changsi Peng, Zuobin Wang, Chunlei Tan, Yu K Verevkin, Yu Yu Gushchina, S Tisserand, V N Petryakov
Publikováno v:
Quantum Electronics. 40:73-76
Four-beam laser interference is shown to stimulate the self-organisation of periodic two-dimensional arrays of nanoislands on the surface of GaAs/InGaAs/GaAs epitaxial structures. (Self-organisation is here taken to mean processes that determine the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::555d5605a33fc5db3968d5b22f83d28c
https://doi.org/10.1070/qe2010v040n01abeh014131
https://doi.org/10.1070/qe2010v040n01abeh014131
Publikováno v:
Tampere University
We demonstrate dual-wavelength emission from optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) with two different gain mirror designs. The first gain mirror design (S1) generated an optical output power of 0.39 W at λS = 98
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::316bbc6a0a205c2a0e0e158d165d4789
https://doi.org/10.3952/lithjphys.50104
https://doi.org/10.3952/lithjphys.50104
Autor:
S. Kivisto, Mircea Guina, Soile Suomalainen, M. Pessa, Oleg G. Okhotnikov, Riku Koskinen, Antti Härkönen, J. Paajaste
Publikováno v:
Lithuanian Journal of Physics. 50:41-46
We have studied monolithically grown GaSb-based vertical-cavity heterostructures. First we demonstrate GaSb-based optically pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) emitting multi-watt output power. A VECSEL gain structure c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8926b107c2ebb237428c494871ba040
https://doi.org/10.3952/lithjphys.50106
https://doi.org/10.3952/lithjphys.50106
Autor:
R.E. Perälä, Börje Johansson, I. J. Vayrynen, Levente Vitos, Kalevi Kokko, Marko Patrick John Punkkinen, Mikhail Kuzmin, Pekka Laukkanen, Matti Ropo, Lang Jouko, M. Ahola-Tuomi, M. Pessa, Janne Pakarinen, Antti Tukiainen
Publikováno v:
Surface Science
Surface core-level shifts (SCLSs) of the (2 x 4)-reconstructed InP(100) surface with the established mixed In-P dimer structure have been investigated by first-principles calculations and photoelec ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f2218a701cbe815eb825edcf409879c
https://doi.org/10.1016/j.susc.2009.07.003
https://doi.org/10.1016/j.susc.2009.07.003