Zobrazeno 1 - 10
of 27
pro vyhledávání: '"M. Pecovska-Gjorgjevich"'
Publikováno v:
Journal of Solid State Electrochemistry. 23:861-870
Electrical and electrocatalytic properties of two series of double perovskites, LnCo1-xCrxO3 (Ln = Pr, Gd, and x = 0, 0.5 and 1), were investigated and discussed in the light of perovskite composition. Studied perovskites were synthesized by the solu
Autor:
P. Tzvetkov, S. Dimitrovska-Lazova, S. Aleksovska, M. Bukleski, Daniela Kovacheva, M. Pecovska-Gjorgjevich
Publikováno v:
Materials Chemistry and Physics. 275:125240
Hybrid organic-inorganic perovskites (HOIPs) have attracted considerable attention, especially organometal trihalide perovskite, as promising materials for high-efficient solar cells. An interesting organic cation that can be incorporated in perovski
Autor:
Slavko Mentus, Violeta Koleva, Gjorgji Petruševski, M. Pecovska-Gjorgjevich, M. Najdoski, Viktor Stefov
Publikováno v:
Journal of Alloys and Compounds. 746:699-709
The electrical properties of little known compounds of the type Mg2KH(XO4)2·15H2O (X = P, As), their dc and ac conductivity and complex impedances are studied for the first time by Electrochemical Impedance Spectroscopy in narrow temperature interva
Publikováno v:
AIP Conference Proceedings.
Y2CrCoO6 perovskite prepared by solution combustion method and sintered at 1073 K has been characterized by dielectric spectroscopy and electric modulus formalism. Temperature and frequency dependent measurements of permitivitty reveal that observed
Autor:
Nace Stojanov, R. Popeski-Dimovski, M. Pecovska-Gjorgjevich, Metodija Najdoski, Julijana Velevska
Publikováno v:
AIP Conference Proceedings.
Prussian blue (PB) is an anodically coloring material which finds its application in the wide area of electrochromic devices, due to its four-color polyelectrochromicity. Here we use electrochemical impedance spectroscopy as a technique to determine
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Publikováno v:
Proceedings of the 2004 IEEE International Conference on Solid Dielectrics, 2004. ICSD 2004..
Ta/sub 2/O/sub 5/ MOS structures with different gate materials (Al, Au, W, TiN, TiN/W) were studied in order to investigate the effect of gate material on the leakage currents, capacity and conduction mechanism. The leakage current density is found f
Publikováno v:
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595).
The effect of oxygen annealing at high temperature (873, 1123 K) on the conduction mechanism of RF sputtered Ta/sub 2/O/sub 5/ (26 nm) on Si has been investigated. It is established that the influence of oxygen treatment on the leakage current is ben
Publikováno v:
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595).
Stress-induced leakage currents in thin Ta/sub 2/O/sub 5/ films were investigated after short term (6 s) and long term (2720 s) constant current stress at both gate polarities for different levels of injected current. Leakage currents were increasing
Publikováno v:
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400).
For MOS capacitors with Ta/sub 2/O/sub 5/ gate insulator, the voltage needed to maintain constant injection current is found to decrease gradually in an initial stage longer then the usual positive charge-trapping phase. The above observation can be