Zobrazeno 1 - 10
of 139
pro vyhledávání: '"M. Papalia"'
Akademický článek
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Autor:
John M. Papalia, Devi Koty, Nathan Marchack, Scott LeFevre, Qingyun Yang, Aelan Mosden, Sebastian U. Engelmann, Robert L. Bruce
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Autor:
Nathan M. Papalia, Murshed Hossain
Publikováno v:
International Journal of Radiology and Radiation Oncology. 6:004-006
Purpose: Failure rates of patient-specific Quality Assurance tests in intensity modulated external beam radiation therapy are known to be correlated with both the degree of modulation and Monitor Units (MU). Our goal is to examine if this remains tru
Autor:
F. Favetti, S. Carbone, Antonio Teti, F. Casella, F. Falez, G. Panegrossi, G. Mazzotta, M. Papalia
Publikováno v:
Injury. 50:S34-S39
Purpose of this study was to analyse the medium term follow-up of minimally invasive plate osteosynthesis (MIPO) for proximal humeral fractures in terms of postoperative shoulder function, radiological outcome and complications.76 consecutive patient
Autor:
Robert L. Bruce, Jin-Ping Han, I. Ok, Abu Sebastian, Geoffrey W. Burr, John M. Papalia, Hsinyu Tsai, Vijay Narayanan, Lynne Gignac, Katie Spoon, Tenko Yamashita, Nicole Saulnier, S. R. Nandakumar, Cheng-Wei Cheng, Andrew H. Simon, Benedikt Kersting, Charles Mackin, Irem Boybat, Stefano Ambrogio, Kevin W. Brew, Matthew J. BrightSky, Ning Li, M. Le Gallo, Praneet Adusumilli, Saraf Iqbal Rashid, Timothy M. Philip, Wanki Kim, Zuoguang Liu, Thomas Bohnstingl, S. Ghazi Sarwat, Nanbo Gong
Publikováno v:
IRPS
Phase change memory (PCM) is rapidly emerging as a promising candidate for building non-von Neumann accelerators for deep neural networks (DNN) based on in-memory computing. However, conductance drift and noise are key challenges for the reliable sto
Autor:
Robert L. Bruce, John M. Papalia, Huai-Yu Cheng, Hiroyuki Miyazoe, Sebastian Engelmann, L. Buzi, Marinus Hopstaken
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning X.
Phase Change Memory (PCM) materials can be damaged during plasma exposure leading to changes in phase transition behavior. Etch-induced damage and crystallization properties of GeSbTe (GST) were evaluated as a function of substrate temperature, plasm
Autor:
Steve Molis, Hiroyuki Miyazoe, John M. Papalia, Sebastian Engelmann, Mahmoud Khojasteh, L. Buzi, Marinus Hopstaken, Robert L. Bruce
Publikováno v:
Advanced Etch Technology for Nanopatterning IX.
Plasma etch residue formation and its removal from silicon nitride (SiN) films deposited at 200oC, 480oC and 700oC is explored. X-Ray Photoelectron Spectroscopy (XPS) measurements showed that SiN contains more nitrogen (N) and less oxygen (O) with in
Akademický článek
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Autor:
John M. Papalia, George G. Totir, Sebastian Engelmann, Hiroyuki Miyazoe, Damon B. Farmer, L. Buzi, Hongwen Yan, Nathan P. Marchack
Publikováno v:
Journal of Applied Physics. 130:080901
The scientific study of plasma discharges and their material interactions has been crucial to the development of semiconductor process engineering and, by extension, the entire microelectronics industry. In recent years, the proliferation of the big
Autor:
Halee E. Carpenter, Christine M. Sharis, Nathan M. Papalia, Murshed Hossain, Thomas J. Stoffel
Publikováno v:
Journal of the American College of Radiology. 14:952-955