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Analog/RF performance of multichannel SOI MOSFET

Autor: Sylvie Lepilliet, M. Paccaud, Tao Chuan Lim, C. Buj-Dufournet, N. Vulliet, Gilles Dambrine, Thomas Ernst, E. Bernard, O. Rozeau, Francois Danneville, Bernard Guillaumot

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2009, 56, pp.1473-1482. ⟨10.1109/TED.2009.2021438⟩
IEEE Transactions on Electron Devices, 2009, 56, pp.1473-1482. ⟨10.1109/TED.2009.2021438⟩

In this paper, for the first time, we present a detailed RF experimental and simulation study of a 3-D multichannel SOI MOSFET (MCFET). Being different from the conventional planar technology, the MCFET features a total of three self-aligned TiN/HfO2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5084b34792612dfa63253a49920f25c
https://hal.archives-ouvertes.fr/hal-00469684

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Les conceptions comme levier d'apprentissage du concept de respiration

Autor: M. Paccaud

Publikováno v: Aster. 13:35-58

Conceptions as learning tools : the concepts of respiration Madeleine Paccaud Our conceptions are ingrained traces of our family, socio-cultural and school histories, they are “what remains... when all else is forgotten”. As they have already bee

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5ba6ce5ad4b830da9ecd44fa63a99f4
https://doi.org/10.4267/2042/9096

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HF characterisation of sub-100nm UTB-FDSOI with TiN/HfO2 gate stack

Autor: M. Paccaud, C. Buj, Gilles Dambrine, Olivier Rozeau, Tao Chuan Lim, Francois Danneville

Publikováno v: Proceedings of the 9th International Conference on Ultimate Integration of Silicon, ULIS 2008
9th International Conference on Ultimate Integration of Silicon, ULIS 2008
9th International Conference on Ultimate Integration of Silicon, ULIS 2008, 2008, Italy. pp.145-148, ⟨10.1109/ULIS.2008.4527160⟩

For the first time, the high frequency (HF) performance of an ultra-thinned body (UTB) fully depleted silicon-on-insulator (FDSOI) incorporating TiN/HfO2 gate stack is reported. UTB-FDSOI with longer unit width Wu (same total width Wtot) features (re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4493f52995afe2a07231f6976cdbf95d
https://hal.archives-ouvertes.fr/hal-00360408

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Compact modeling of the self heating effect in 120 nm multifinger body-contacted SOI MOSFET for RF circuits

Autor: M. Paccaud, P. Martin, Olivier Rozeau, R. Daviot, M. Reyboz

Publikováno v: 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).

With enhancement in the cut-off frequency, CMOS technologies become good candidates for RF applications. Moreover, SOI technologies allow to increase circuit speed, electrical device insulation, suppression of latch up, etc. However, buried oxide inc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a3bd57061448f40b0bd12544aa8d9a9
https://doi.org/10.1109/soi.2004.1391598

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