Zobrazeno 1 - 10
of 24
pro vyhledávání: '"M. P. Yakubenya"'
Autor:
S. V. Subach, M. D. Vilisova, I. T. Shulepov, T. V. Korableva, V. S. Lukash, L. G. Lavrent'eva, I. V. Ivonin, M. P. Yakubenya
Publikováno v:
Russian Physics Journal. 42:17-21
It is known that during gas-phase epitaxy of InP and GaAs the region of the film close to the heteroboundary is formed with altered phase, structural, and electrophysical properties. The main cause for this is formation of a transition layer due to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce1693484f18700083cee0ae135e71a0
https://doi.org/10.1007/bf02508239
https://doi.org/10.1007/bf02508239
Publikováno v:
Soviet Physics Journal. 35:136-139
A study has been made of the dependence of the crystal lattice parameter and the structural perfection of epitaxial layers of InxGa1−xAs on substrates of GaAs and InP and on the composition of the solid solution. The electrophysical properties of l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::557c2b21899f88cad737c1d820121b0b
https://doi.org/10.1007/bf00936866
https://doi.org/10.1007/bf00936866
Autor:
M. P. Yakubenya, V. V. Tret’yakov, S. I. Goloshchapov, D. I. Lubyshev, M. D. Vilisova, V. V. Chaldyshev, B. R. Semyagin, A. I. Veinger, V. V. Preobrazhenskii, N. A. Bert, I. V. Ivonin, A. E. Kunitsyn, S. V. Kozyrev, L. G. Lavrentieva
Publikováno v:
Scopus-Elsevier
The structure and properties of GaAs layers grown by molecular-beam epitaxy at low temperature (150-250 °C) have been studied. The samples were found to contain up to 1.5 at.% extra As, which formed nano-scale clusters under annealing. The dependenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39a560db7ced18d13ca6a3e9611ba40b
https://doi.org/10.1557/proc-325-401
https://doi.org/10.1557/proc-325-401
Autor:
V. G. Bozhkov, A. A. Yatis, V. M. Zavodchikov, K. V. Soldatenko, M. P. Yakubenya, I. V. Ivonin
Publikováno v:
Soviet Physics Journal. 28:704-709
The methods of Rutherford back scattering of helium ions and x-ray diffraction and electron microscope analysis are used to study phase interaction in GaAs contacts with layers of group I metals (Cu, Ag, Au) with annealings in a hydrogen atmosphere.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad4c06170e024037144ad1ba0e5d7c50
https://doi.org/10.1007/bf00895518
https://doi.org/10.1007/bf00895518
Autor:
A. E. Shubin, M. P. Yakubenya, I. V. Ivonin, L. F. Lavrent'eva, G. A. Aleksandrova, L. M. Krasil'nikova
Publikováno v:
Soviet Physics Journal. 23:813-817
Kinetic (growth rate), optical, and electron-microscopic (surface relief) studies were made of the process of formation of homoepitaxial films of InAs in a chloride gas-transport system. It was found that the (111)A and B surfaces of indium arsenide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef547f2ca26a53aab92d3f2f054066b1
https://doi.org/10.1007/bf00892532
https://doi.org/10.1007/bf00892532
Autor:
I. D. Romanova, M. P. Yakubenya, V. S. Morozov, L. Yu. Potakhova, N. K. Maksimova, A. M. Misik, O. M. Ivleva, V. P. Yanovskii
Publikováno v:
Soviet Physics Journal. 30:131-136
Studies were made of heat-treated Ni-GaAs contacts, at which, prior to the electrochemical deposition of nickel, thin layers of gallium or arsenic were deposited. The physicochemical reactions at the interfaces were investigated, as well as the elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a68464bf9cfd3a2e5916b9683b54a9c
https://doi.org/10.1007/bf00898151
https://doi.org/10.1007/bf00898151
Autor:
M. P. Yakubenya, A. P. Vyatkin, I. D. Romanova, N. K. Maksimova, E. N. Pekarskii, N. M. Panova
Publikováno v:
Soviet Physics Journal. 24:295-298
The electrical characteristics of surface-barrier GaAs-Pd/Ni structures and the physicochemical interaction processes at the metal-semiconductor boundary were comprehensively investigated in relation to heat treatment in various atmospheres. X-Ray st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b86bc339e0e01b62547fae9721d12ee2
https://doi.org/10.1007/bf00898256
https://doi.org/10.1007/bf00898256
Publikováno v:
Soviet Physics Journal. 28:542-546
The electrophysical properties, the lattice constant, and the structure of sulfur doped epitaxial gallium arsenide layers were investigated using a complex of methods. The experimental data indicate that the sulfur atoms can exist in the GaAs lattice
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e7c5f603d28f4422576a400cea6155d
https://doi.org/10.1007/bf00896179
https://doi.org/10.1007/bf00896179
Publikováno v:
Soviet Physics Journal. 29:5-10
The interphase interaction at indium phosphide contacts with layers of metals of group I (Cu, Ag, Au) annealed in an atmosphere of oxygen is investigated using the method of Rutherford backscattering, x-ray structure analysis, and electrophysical mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5e8ee8d26cfb54d5d8688d41fac170a
https://doi.org/10.1007/bf00892544
https://doi.org/10.1007/bf00892544
Publikováno v:
Soviet Physics Journal. 18:1074-1077
It has been found that the final stage in the growth of an epitaxial film is decoration of the surface; to obtain objective information on the growth relief, it is necessary to examine at least two successive carbon replicas.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0c999f3c05aeb6f2d1e6c2313f0837a
https://doi.org/10.1007/bf01110023
https://doi.org/10.1007/bf01110023