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Autor:
S. B. Kushev, M. P. Sumez, V. M. Ievlev, M. N. Bezryadin, Oleg V. Ovchinnikov, S. V. Kannykin, A. M. Vozgorkov, A. N. Latyshev, M. S. Smirnov, L. Yu. Leonova
Publikováno v:
Semiconductors. 48:251-256
The structure and electrical and optical properties of heterostructures formed on the surface of single-crystal silicon wafers as a result of the heat treatment and pulsed photon treatment of Ti films in oxygen, air, and nitrogen are investigated. It