Výsledky vyhledávání - "M. P. Sheglov"

Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al x Ga1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy

Autor: V. V. Ratnikov, D. Yu. Kazantsev, I. V. Osinnykh, K. S. Zhuravlev, M. P. Sheglov, B. Ya. Ber, Timur V. Malin

Publikováno v: Semiconductors. 52:221-225

The deformation mode and defect structure of Al x Ga1 – xN:Si epitaxial layers (x = 0–0.7) grown by molecular beam epitaxy and doped with Si under a constant silane flux are studied by X-ray diffractometry. The concentration of Si atoms in the la

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::05e01f1462c46cf7cf451e232a9d29e0
https://doi.org/10.1134/s1063782618020136

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