Zobrazeno 1 - 9
of 9
pro vyhledávání: '"M. P. Sheglov"'
Autor:
V. V. Ratnikov, D. Yu. Kazantsev, I. V. Osinnykh, K. S. Zhuravlev, M. P. Sheglov, B. Ya. Ber, Timur V. Malin
Publikováno v:
Semiconductors. 52:221-225
The deformation mode and defect structure of Al x Ga1 – xN:Si epitaxial layers (x = 0–0.7) grown by molecular beam epitaxy and doped with Si under a constant silane flux are studied by X-ray diffractometry. The concentration of Si atoms in the la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05e01f1462c46cf7cf451e232a9d29e0
https://doi.org/10.1134/s1063782618020136
https://doi.org/10.1134/s1063782618020136
Autor:
Guzilova, L. I.1 (AUTHOR) guzilova@ioffe.mail.ru, Grashchenko, A. S.2 (AUTHOR), Butenko, P. N.1 (AUTHOR), Chikiryaka, A. V.1 (AUTHOR), Pechnikov, A. I.1 (AUTHOR), Nikolaev, V. I.1 (AUTHOR)
Publikováno v:
Technical Physics Letters. Oct2021, Vol. 47 Issue 10, p709-713. 5p.
Autor:
Nikolaev, V. I.1,2 (AUTHOR) vladimir.i.nikolaev@gmail.com, Pechnikov, A. I.1,2 (AUTHOR), Guzilova, L. I.1,2 (AUTHOR), Chikiryaka, A. V.1 (AUTHOR), Shcheglov, M. P.1 (AUTHOR), Nikolaev, V. V.3 (AUTHOR), Stepanov, S. I.1,2,3 (AUTHOR), Vasil'ev, A. A.2 (AUTHOR), Shchemerov, I. V.2 (AUTHOR), Polyakov, A. Ya.2 (AUTHOR)
Publikováno v:
Technical Physics Letters. Mar2020, Vol. 46 Issue 3, p228-230. 3p.
Autor:
Ratnikov, V.1 ratnikov@mail.ioffe.ru, Sheglov, M.1, Ber, B.1, Kazantsev, D.1, Osinnykh, I., Malin, T.2, Zhuravlev, K.
Publikováno v:
Semiconductors. Feb2018, Vol. 52 Issue 2, p221-225. 5p.
Autor:
Konoplin, A Yu, Pyatavin, P A
Publikováno v:
IOP Conference Series: Earth & Environmental Science; 3/9/2021, Vol. 666, p1-7, 7p
Autor:
Wu, B., Bai, J., Tassev, V.L., Lal Nakarmi, M., Sun, W., Huang, X., Dudley, M., Zhang, H., F. Bliss, D., Lin, J., Jiang, H., Yang, J., Asif Khan, M.
Publikováno v:
MRS Online Proceedings Library; 2005, Vol. 892 Issue 1, p1-6, 6p
Publikováno v:
MRS Online Proceedings Library; 2001, Vol. 693 Issue 1, p519-524, 6p
Publikováno v:
MRS Online Proceedings Library; 1997, Vol. 482 Issue 1, p346-351, 6p
Autor:
Mynbaeva, M., Saddow, S. E., Melnychuk, G., Nikitina, I., Scheglov, M., Sitnikova, A., Kuznetsov, N., Mynbaev, K., Dmitriev, V.
Publikováno v:
Applied Physics Letters; 1/1/2001, Vol. 78 Issue 1, p117, 3p, 1 Black and White Photograph, 2 Diagrams, 1 Graph