Zobrazeno 1 - 10
of 57
pro vyhledávání: '"M. P. Shcheglov"'
Publikováno v:
Mechanics of Solids.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a55344e967247a7b84fea10f7c6afa4a
https://doi.org/10.3103/s0025654422601392
https://doi.org/10.3103/s0025654422601392
Publikováno v:
Inorganic Materials. 56:928-933
4H-silicon carbide ingots with high structural perfection have been grown by the modified Lely method (LETI method) on 100-mm-diameter seeds. Using our experimental data and theoretical analysis, we have systematized the key factors responsible for t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6a9c2f5010ca107f9545c3ea933a1b3
https://doi.org/10.1134/s0020168520090034
https://doi.org/10.1134/s0020168520090034
Autor:
B. Kh. Khannanov, M. P. Shcheglov, V. A. Bokov, V. G. Zalessky, S. G. Lushnikov, T. A. Smirnova, E. I. Golovenchits, V. A. Sanina
Publikováno v:
Journal of Experimental and Theoretical Physics. 130:439-445
The permittivity, conductivity, electric polarization, and features of high-resolution X-ray diffraction scattering of a relaxor ferroelectric PbCo1/3Nb2/3O3 have been investigated in the temperature range 5–350 K. Continuous correlated temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bc5f5665cb1ca7f7c304a8abe0b9257
https://doi.org/10.1134/s1063776120030048
https://doi.org/10.1134/s1063776120030048
Autor:
S. N. Rodin, N. D. Gruzinov, M. P. Shcheglov, Vasily N. Bessolov, V. N. Panteleev, E. V. Konenkova, M. E. Kompan
Publikováno v:
Technical Physics Letters. 46:382-384
Epitaxial aluminum nitride (AlN) layers on Si(111) substrates have been grown by sequential application of several techniques including reactive magnetron sputter deposition to a thickness of 20 nm, metalorganic vapor-phase epitaxy (MOVPE) to a total
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b76161dd1b1f6101705c80d997bc1c27
https://doi.org/10.1134/s1063785020040185
https://doi.org/10.1134/s1063785020040185
Autor:
V. V. Nikolaev, A. V. Chikiryaka, Ivan Shchemerov, A. I. Pechnikov, Sergey Stepanov, A. Ya. Polyakov, L. I. Guzilova, V. I. Nikolaev, M. P. Shcheglov, A. A. Vasilev
Publikováno v:
Technical Physics Letters. 46:228-230
Epitaxial layers of a new wide-band semiconductor (α-Ga2O3 doped with tin) have been grown by chloride epitaxy on smooth and patterned substrates, which are widely used to increase the emission yield in high-efficiency LED structures based on InGaN,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b31f253530f386abe855cb3edb3a92b0
https://doi.org/10.1134/s106378502003013x
https://doi.org/10.1134/s106378502003013x
Autor:
N. V. Seredova, S. N. Rodin, A. V. Solomnikova, T. A. Orlova, E. Konenkova, V. K. Smirnov, D. S. Kibalov, V. N. Bessolov, M. P. Shcheglov
Publikováno v:
Semiconductors. 53:989-992
Semipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with SixNy nanostrips on top of nanostructures can yield, via metal-organic chemical-vapor deposition, GaN(10 $$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa9d4a623be3fb32bd0765bda9904ba0
https://doi.org/10.1134/s1063782619070054
https://doi.org/10.1134/s1063782619070054
Autor:
V. N. Panteleev, S. Konenkov, V. N. Bessolov, T. V. L’vova, M. P. Shcheglov, E. V. Konenkova, E. V. Gushchina
Publikováno v:
Technical Physics. 64:531-534
Synthesis of AlN and GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy has been considered. The process includes sulfidizing of the silicon surface, nucleation and growth of an AlN layer, and then formation of a GaN/AlN structure. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9cc159fd0d498776a6f9d6e1a297dca
https://doi.org/10.1134/s1063784219040054
https://doi.org/10.1134/s1063784219040054
Publikováno v:
Physics of the Solid State. 61:370-378
Electric polarization in ErCrO3 single crystals has been investigated in the temperature range of 5_370 K. Ferroelectric ordering has not been found in any of the directions. However, electric polarization induced by restricted polar domains of struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2203fb38c6ce0d8034c161d9234eec5e
https://doi.org/10.1134/s1063783419030284
https://doi.org/10.1134/s1063783419030284
Publikováno v:
Physics of the Solid State. 60:537-548
A comparative study of the dielectric properties and electric polarization of multiferroics GdMn2O5 and Gd0.8Ce0.2MnO5 has been carried out in the temperature range 5–330 K. The polarization properties in the ferroelectric state that forms due to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4c4718025f46bddc726cdb53eb8f548
https://doi.org/10.1134/s1063783418030289
https://doi.org/10.1134/s1063783418030289
Autor:
R.N. Kyutt, M. P. Shcheglov
Publikováno v:
Technical Physics Letters. 44:548-550
X-ray diffraction (XRD) in asymmetric Bragg geometry was measured and XRD intensity distribution maps in the reciprocal space were constructed for GaN epitaxial layers with various degrees of structural perfection grown on c-sapphire substrates. It i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1886cb81ed1652a52c691b16634fda36
https://doi.org/10.1134/s106378501806024x
https://doi.org/10.1134/s106378501806024x