Zobrazeno 1 - 7
of 7
pro vyhledávání: '"M. P. Semtsiv"'
Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions with InGaAs-like interfaces. Band offsets are probed using conductance spectra, with tip-induced band bending accounted for using three-dimensional electrosta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44f3b243f4ba4661bed6d34ae7ca3918
Autor:
E. Mujagić, S. Schartner, L. K. Hoffmann, D. Andrijasević, M. Nobile, H. Detz, W. Schrenk, M. P. Semtsiv, W. T. Masselink, G. Strasser, Marília Caldas, Nelson Studart
Publikováno v:
ResearcherID
We describe the fabrication and operation of quantum cascade ring lasers providing grating‐coupled surface emission. The devices exhibit tunable far fields, ranging from spot‐ to ring‐shaped symmetric beam cross sections, depending on the grati
Autor:
L. K. Hoffmann, C. A. Hurni, S. Schartner, E. Mujagić, W. Schrenk, A. M. Andrews, P. Klang, M. P. Semtsiv, W. T. Masselink, G. Strasser, Marília Caldas, Nelson Studart
Publikováno v:
AIP Conference Proceedings.
We present a coherent coupling scheme for mid‐infrared quantum cascade lasers. Based on far field analysis, fundamental lateral modes are realized in Y‐coupled resonators, which are locked in phase. The concept enhances the output power of a sing
Autor:
N. E. Korsunskaya, G. N. Semenova, S. Yu. Sapko, Yu. G. Sadof’ev, L. V. Shekhovtsov, E. F. Venger, M. P. Semtsiv
Publikováno v:
Technical Physics Letters. 26:190-192
The spectral characteristics and transverse distribution of the photo emf were studied in a heteroepitaxial ZnSe-GaAs structure obtained by MBE on a zinc-stabilized GaAs(100) substrate surface. The spectral measurements revealed unusual manifestation
Autor:
M. Goiran, J. M. Poumirol, M. P. Semtsiv, W. T. Masselink, D. Smirnov, V. V. Rylkov, J. Léotin, M. R. Singh, R. H. Lipson
Publikováno v:
AIP Conference Proceedings.
Cyclotron resonance, quantum Hall effect, and Shubnikov de Haas oscillations measurements of quasi‐two‐dimensional (2‐D) electrons in modulation‐doped AIP quantum wells are investigated. This study enables to clarify the electronic structure
Publikováno v:
Applied Physics Letters. 89:211124
Publikováno v:
Nanotechnology; Jan2007, Vol. 18 Issue 4, p44015-44015, 1p