Zobrazeno 1 - 10
of 11
pro vyhledávání: '"M. P. Ruzaikin"'
Autor:
Yu. Yu. Hervieu, M. P. Ruzaikin
Publikováno v:
Surface Science. 408:57-71
Surface processes of doping during co-deposition of impurity and major constituent atoms in MBE are studied using the model based on the theory of layer-by-layer growth. The model consistently accounts for the impurity adsorption, desorption, surface
Publikováno v:
Russian Physics Journal. 41:587-592
Within the framework of a simple (i.e., ignoring lateral interactions) lattice model, surface migration of adsorbed atoms of a crystalline substance A is considered for the case in which the surface is densely covered by the adsorbed atoms of a noncr
Publikováno v:
Russian Physics Journal. 40:804-809
An imitation model of layered crystal growth from a molecular beam is presented which takes account of the random character of the formation of nuclei and the dependence of their growth rate on their mutual positions. The dependence of the form of th
Autor:
M. P. Ruzaikin, Yu. Yu. Erv'e
Publikováno v:
Russian Physics Journal. 38:854-858
Doping processes using molecular beam epitaxy are considered using a model of impurity in fractures. Expressions for depth of the transition region dt the steady state impurity concentration in the crystal xBst and the insertion coefficient KB, all c
Publikováno v:
Soviet Physics Journal. 33:491-494
A thermodynamic calculation of the equilibrium composition of the gas phase Ga-As-Sn-Cl-H system was carried out. An estimate of the impurity composition of adsorbate layers was made. A study of the electrophysical and photoluminescent properties of
Autor:
M. P. Ruzaikin, Yu. Yu. Hervieu
Publikováno v:
Growth of Crystals ISBN: 9781461351214
It can be inferred from currently available experimental data that specific features of the formation of point defects and nonuniform impurity distribution in thin layers of binary semiconductors result from specific features of the incorporation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55fbcd2cf0c538c4f35eb07b3d6a8b24
https://doi.org/10.1007/978-1-4615-0537-2_1
https://doi.org/10.1007/978-1-4615-0537-2_1
Autor:
M. P. Ruzaikin, A. B. Svechnikov
Publikováno v:
Growth of Crystals ISBN: 9780306181184
Characteristics of interatomic interactions and structural features in the phase contact region are of great interest in studying growth processes of crystals and epitaxial layers of semiconductors. Two phases come into contact through an adsorption
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeaa7c9b37cb68e661f8ff13c1d9effa
https://doi.org/10.1007/978-1-4615-3268-2_2
https://doi.org/10.1007/978-1-4615-3268-2_2
Autor:
G. F. Lymar, G. A. Aleksandrova, A. E. Shubin, L. G. Lavrent'eva, I. V. Ivonin, M. P. Ruzaikin
Publikováno v:
Soviet Physics Journal. 25:322-325
The electrophysical properties and the growth rates of InAs layers are considered as a function of the substrate orientation in the crystallographic range (111)A-(001)-(111)B. A comparison is made with similar dependences for GaAs.
Autor:
N. V. Kudryavtseva, M. P. Ruzaikin
Publikováno v:
Soviet Physics Journal. 17:934-938
The influence of the change in relationships between the parameters of a base-centered monoclinic lattice on the shape of the Brillouin zone and the location of equivalent points on its surface is examined.
Autor:
N. V. Kudryavtseva, M. P. Ruzaikin
Publikováno v:
Soviet Physics Journal. 17:1095-1098
Using the methods of group theory, we obtained parametric expressions for the laws of dispersion in a quadratic approximation of the resolution along components of the wave vector, the possible multiplicity of degeneration, and the zero slopes of the