Zobrazeno 1 - 2
of 2
pro vyhledávání: '"M. P. Lesniak"'
Publikováno v:
Journal of Physics D: Applied Physics. 29:934-938
Deep level transient spectroscopy (DLTS) has ben employed to study the cause of minority carrier lifetime degradation observed during the development phase of a single crystal silicon solar cell production process. Results on float-zone (FZ) samples
Autor:
DW Cunningham, J.G. Summers, A.M. Mitchell, B. M. Neville, TM Bruton, KC Heasman, M. P. Lesniak, B.E. Lord, A.E. Hughes
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
The heat exchange method (HEM) process has been used to produce ingots up to 80 kg in weight. The minority carrier diffusion length of ingots has been measured principally by the time-resolved microwave reflectance technique to determine the factors