Zobrazeno 1 - 6
of 6
pro vyhledávání: '"M. P. Kisselyuk"'
Autor:
A. I. Vlasenko, V. P. Veleschuk, Z. K. Vlasenko, M. P. Kisselyuk, P. G. Lytovchenko, I. V. Petrenko, V. P. Tartachnyk, M. B. Pinkovska
Publikováno v:
Âderna Fìzika ta Energetika, Vol 16, Iss 4, Pp 362-366 (2015)
Effect of the reactor fast neutron flux (E = 2 MeV, Ф = 2⋅1014 n/cm2) on the current-voltage, capacitance-voltage characteristics, the electroluminescence intensity of power ІnGaN/GaN LEDs on the SіC and AuSn/Si substrates are studied. It was re
Externí odkaz:
https://doaj.org/article/da621bd4936b4236a9388571a0e2a435
Publikováno v:
Semiconductors. 49:1007-1011
The shift between the maxima of the electroluminescence spectra of In x Ga1 − x N/GaN structures is measured at forward and reverse bias depending on the indium content x in the quantum well and on the substrate material (SiC, AuSn/Si, and Al2O3).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::898a39a045fac70427fee21aa6d8305b
https://doi.org/10.1134/s1063782615080229
https://doi.org/10.1134/s1063782615080229
Publikováno v:
Journal of Applied Spectroscopy. 80:117-123
Microplasma breakdown luminescence of InGaN/GaN heterostructures in different types of high-power light emitting diodes is studied. It is shown that the spectrum of the breakdown luminescence, the luminescence onset voltage, the current in the first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46a2b9c5ba218d2bc5ebb5b3b250537c
https://doi.org/10.1007/s10812-013-9730-7
https://doi.org/10.1007/s10812-013-9730-7
Autor:
Ts. A. Kryskov, M. P. Kisselyuk, O. S. Litvin, I. V. Kruglenko, M. S. Zayats, O. I. Vlasenko, M. V. Vuychik, P. O. Gentsar
Publikováno v:
Semiconductors. 44:1012-1015
Morphological and optical studies (ellipsometry and reflectance spectroscopy in the ranges 400–750 nm and 1.4–25 μm) of thin GaSe films fabricated by thermal evaporation on the n-Si (111) single-crystal substrates are reported. The film thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7bc8426becef1667b3242dc46e391ab
https://doi.org/10.1134/s1063782610080099
https://doi.org/10.1134/s1063782610080099
Publikováno v:
Materials Research Express. 2:055902
In this work, we studied the controlled microplasma breakdown of InGaN/GaN heterostructures in power light-emitting diodes (LEDs) prepared on various substrates (SiC, AuSn/Si, Al2O3). It was ascertained that LED microplasma characteristics are relate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b2d10ecf5ade2391773c32157ad7314
https://doi.org/10.1088/2053-1591/2/5/055902
https://doi.org/10.1088/2053-1591/2/5/055902
Autor:
A. I. Vlasenko, Z. K. Vlasenko, V. P. Tartachnyk, M.B. Pinkovska, V. P. Veleschuk, I. V. Petrenko, M. P. Kisselyuk, P.G. Lytovchenko
Publikováno v:
Scopus-Elsevier
Âderna Fìzika ta Energetika, Vol 16, Iss 4, Pp 362-366 (2015)
Âderna Fìzika ta Energetika, Vol 16, Iss 4, Pp 362-366 (2015)
Effect of the reactor fast neutron flux (E = 2 MeV, Ф = 2⋅1014 n/cm2) on the current-voltage, capacitance-voltage characteristics, the electroluminescence intensity of power ІnGaN/GaN LEDs on the SіC and AuSn/Si substrates are studied. It was re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5ea07a71f6aa6024971f58925658055
http://www.scopus.com/inward/record.url?eid=2-s2.0-84962549173&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-84962549173&partnerID=MN8TOARS
