Zobrazeno 1 - 10
of 53
pro vyhledávání: '"M. P. Grimshaw"'
Autor:
Martin Elliott, A Potts, R Shepherd, Alan Usher, M. P. Grimshaw, C L Jones, David A. Ritchie, G. A. C. Jones, Edmund H. Linfield, W. G. Herrenden-Harker
Publikováno v:
Journal of Physics: Condensed Matter. 8:5189-5207
We have used a torque magnetometer to measure de Haas - van Alphen oscillations in the magnetization of two-dimensional electrons in GaAs/AlGaAs heterostructures and multiple-quantum-well systems for temperatures ranging from 0.125 K to 4.2 K and in
Autor:
David A. Ritchie, L. L. Wang, Clare Foden, Jeremy Burroughes, M. P. Grimshaw, Tina M. Burke, M. L. Leadbeater, Michael Pepper
Publikováno v:
Surface Science. :587-590
We investigate electron transport in a spatially varying magnetic field generated by applying a uniform field to a non-planar 2DEG grown by MBE on a substrate patterned with etched facets. When a magnetic field is applied in the plane of the substrat
Autor:
M. P. Grimshaw, Charles G. Smith, G. A. C. Jones, Edmund H. Linfield, K. M. Brown, Mark Field, David A. Ritchie, Michael Pepper
Publikováno v:
Surface Science. :154-157
We have used a double two-dimensional electron gas (double 2DEG) sample to measure the density of states in one of the 2DEGs over a submicron area. The lower 2DEG screens the electric field between the plates of a mesoscopic capacitor made up of a qu
Autor:
Michael Pepper, M. P. Grimshaw, N. K. Patel, David A. Ritchie, P. D. Rose, G. A. C. Jones, Edmund H. Linfield, I. S. Millard
Publikováno v:
Physical Review B. 53:15443-15446
There have been predictions that for closely spaced two-dimensional electron gases (2DEG's), charge transfer between the 2DEG's can arise from electron interactions due to exchange and correlation [Ruden and Wu, Appl. Phys. Lett. 59, 2165 (1991)]. In
Autor:
Michael Pepper, David A. Ritchie, K. M. Brown, G. A. C. Jones, I. M. Castleton, Edmund H. Linfield, M. P. Grimshaw, N. K. Patel, Atsushi Kurobe
Publikováno v:
Semiconductor Science and Technology. 11:703-711
Lateral transport studies of double quantum wells have led to the observation of large nonlinear transconductances. This can arise from mobility modulation and resonant tunnelling. In this paper, by measuring samples with different coupling, we are a
Autor:
H. P. Hughes, G. A. C. Jones, David A. Ritchie, Arshad Saleem Bhatti, M. P. Grimshaw, D. Richards, A. C. Churchill
Publikováno v:
Solid-State Electronics. 40:719-723
Results are presented on spatially resolved Raman scattering and photoluminescence measurements of a drifting two-dimensional electron gas. Under drifting conditions, a low energy feature is observed in polarized Raman scattering in addition to the i
Autor:
D.E. Bangert, A. C. Churchill, H. P. Hughes, H. Hüsken, M. P. Grimshaw, D. Richards, G. A. C. Jones, David A. Ritchie
Publikováno v:
Solid-State Electronics. 40:203-207
Raman scattering measurements of the dispersion of intrasubband plasmons in a two-dimensional electron gas under a biased linear metal grating are presented. The momentum resolution of the Raman experiment allows a large range of wavevectors to be pr
Autor:
M. P. Grimshaw, Jeremy Burroughes, David A. Ritchie, Michael Pepper, Tina M. Burke, R. J. Evans
Publikováno v:
Materials Science and Engineering: B. 35:203-207
The transport properties of a series of long (5-100 μm) channels formed by a novel technique has been investigated at low temperatures. The wire is formed by growing a quantum well structure over a patterned (100) substrate which is etched to expose
Autor:
David A. Ritchie, M. A. Quierin, M. P. Grimshaw, M. L. Leadbeater, Jeremy Burroughes, Michael Pepper
Publikováno v:
Materials Science and Engineering: B. 35:198-202
MBE regrowth on patterned np-GaAs wafers has been used to fabricate GaAs/AlGaAs double barrier resonant tunnel diodes with a side-gate in the plane of the quantum well. The first growth is of a n + -GaAs collector layer followed by a p + -GaAs layer.
Autor:
M. P. Grimshaw, H. P. Hughes, G. A. C. Jones, Michael Pepper, David A. Ritchie, R. E. Tyson, Jeremy Burroughes, Donald Dominic Arnone
Publikováno v:
Solid State Communications. 96:85-88
A quasi-one dimensional (Q1D) electron gas has been fabricated from a high electron mobility transistor regrown by molecular beam epitaxy onto facets of a patterned backgate consisting of alternate layers of p- and n-GaAs. By applying biases independ