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pro vyhledávání: '"M. P. Duhnovskii"'
Autor:
A. A. Yugov, S. N. Knyazev, Yu. P. Kozlova, M. P. Duhnovskii, S. S. Malahov, T. G. Yugova, I. A. Belogorokhov, A. A. Donskov
Publikováno v:
Semiconductors. 50:411-414
The effect of the type of substrate, sapphire substrate (c- and r-orientation) or GaN/Al2O3 template (c- and r-orientations), on the nitridation of an amorphous titanium nanolayer is shown. The effect of the titanium-nanolayer thickness on thick GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6149ff8dd6d9a61eb94c163543b6d533
https://doi.org/10.1134/s1063782616030246
https://doi.org/10.1134/s1063782616030246
