Zobrazeno 1 - 10
of 21
pro vyhledávání: '"M. P. C. M. Krijn"'
Publikováno v:
Acta Horticulturae. :661-668
Light emitting diodes (LEDs) have become very efficient light sources for application in horticulture. Light sources based on LEDs are relatively easy to control in intensity and spectrum. Light-source optimization allows growth efficiency and qualit
Autor:
M. P. C. M. Krijn, Dave Beaumont, Fetze Pijlman, Ruslan Akhmedovich Sepkhanov, H. vd Schaft, Hendrikus Hubertus Petrus Gommans, Rene Sanders, Silvia Maria Booij, S.T. de Zwart
Publikováno v:
Imaging and Applied Optics 2015.
Non-imaging optics for LED lighting have been heavily explored and developed over the last years. In this paper we present design and manufacturing methods for free form TIR-Fresnel lenses.
Autor:
M P C M Krijn
Publikováno v:
Semiconductor Science and Technology. 6:27-31
Estimates of valence-band and conduction-band offsets for lattice-matched and pseudomorphic strained heterostructures of six technologically important III-V quaternary alloys are presented. Valence-band offsets are obtained via interpolation of the t
Autor:
R. W. J. Hollering, H. W. L. Lindelauf, D. Dijkkamp, M. P. C. M. Krijn, P. A. M. van der Heide
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:3997-4000
Experimental results are presented on the deposition of barium on clean Si(001) studied by optical second‐harmonic generation and work function measurements. Barium deposition up to one monolayer coverage enhances the signals by nearly a factor of
Autor:
Bart Andre Salters, M. P. C. M. Krijn
Publikováno v:
SPIE Proceedings.
Solid State Lighting is becoming increasingly more advanced, both in terms of lumen output as well as energy efficiency. At the same time, packages emitting enough lumens for lighting applications are decreasing in size. This smaller packaging enable
Autor:
Huub Ambrosius, R. M. L. Peeters, G.A. Acket, C. J. van der Poel, M. P. C. M. Krijn, R.W.M. Linders
Publikováno v:
Applied Physics Letters. 63:2312-2314
Separate confinement strained layer single quantum well diode lasers on GaAs substrates have been fabricated by low‐pressure organometallic vapor phase epitaxy. Laser diode structures with a 90 A quantum well under compressive strain, composed of I
Autor:
J.J.M. Binsma, T. van Dongen, R. W. M. Slootweg, M. P. C. M. Krijn, L.F. Tiemeijer, J. van der Heijden, P.J.A. Thijs
Publikováno v:
Applied Physics Letters. 62:826-828
A polarization insensitive (less than 1 dB gain difference over the 3 dB gain bandwidth) multiple quantum well laser amplifier for the 1300 nm window is reported for the first time. The amplifiers employ a single active layer containing three tensile
Publikováno v:
Applied Physics Letters. 61:3169-3171
The origin of the polarization of the photoluminescence in ordered InGaP is investigated. The ordering induced lowering of the cubic crystal symmetry is caused by a superlattice and/or strain effects in two of the four 〈111〉 crystal directions re
Autor:
G. W. ’t Hooft, M. P. C. M. Krijn, C. J. van der Poel, Peter J. A. Thijs, T. van Dongen, M.J.B. Boermans, J.J.M. Binsma, Lukas Frederik Tiemeijer
Publikováno v:
Applied Physics Letters. 61:1772-1774
The results of a theoretical study together with an experimental verification of the effects of strain on the laser characteristics of InxGa1−xAs/InGaAsP quantum‐well lasers are reported. It is shown that tensile strained quantum‐well lasers ca
Autor:
R. Eppenga, M. P. C. M. Krijn
Publikováno v:
Physical Review B. 44:9042-9044
Results for the electronic structure and optical properties of ${\mathrm{CrSi}}_{2}$ as obtained from ab initio self-consistent augmented-spherical-wave calculations are presented. Further evidence of the semiconducting nature of pure ${\mathrm{CrSi}