Zobrazeno 1 - 1
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pro vyhledávání: '"M. P. Belyansky"'
Autor:
J. Yuan, C. Gruensfelder, K. Y. Lim, T. Wallner, M. K Jung, M. J. Sherony, Y. M. Lee, J. Chen, C. W. Lai, Y.T. Chow, K. Stein, L. Y. Song, H. Onoda, C. W. An, H. Wang, B. K. Moon, J. Kim, H. Inokuma, H. Yamasaki, J. Shah, H.V. Meer, S. B. Samavedam, Q. T. Zhang, C. Zhu, Y. Park, Y. E. Lim, R. Nieuwenhuizen, J. P. Han, M. Hamaguchi, W.L. Lai, M. P. Belyansky, O. Gluschenkov, S. Johnson, R. Divakaruni, E. F. Kaste, J. Sudijono, J. H. Ku, F. Matsuoka, W. Neumueller, R. Sampson, M. Sekine, A. Steegen
Publikováno v:
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
In this paper, we describe the performance elements used in our 28nm bulk devices with the gate first high-k/metal gate scheme for high performance applications. By using the innovative stressor integrations including improved stress memory technique