Zobrazeno 1 - 10
of 16
pro vyhledávání: '"M. P. Belyansky"'
Autor:
J. Yuan, C. Gruensfelder, K. Y. Lim, T. Wallner, M. K Jung, M. J. Sherony, Y. M. Lee, J. Chen, C. W. Lai, Y.T. Chow, K. Stein, L. Y. Song, H. Onoda, C. W. An, H. Wang, B. K. Moon, J. Kim, H. Inokuma, H. Yamasaki, J. Shah, H.V. Meer, S. B. Samavedam, Q. T. Zhang, C. Zhu, Y. Park, Y. E. Lim, R. Nieuwenhuizen, J. P. Han, M. Hamaguchi, W.L. Lai, M. P. Belyansky, O. Gluschenkov, S. Johnson, R. Divakaruni, E. F. Kaste, J. Sudijono, J. H. Ku, F. Matsuoka, W. Neumueller, R. Sampson, M. Sekine, A. Steegen
Publikováno v:
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
In this paper, we describe the performance elements used in our 28nm bulk devices with the gate first high-k/metal gate scheme for high performance applications. By using the innovative stressor integrations including improved stress memory technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5883a6ad6f396df3dff6365951ae710c
https://doi.org/10.1109/icsict.2010.5667851
https://doi.org/10.1109/icsict.2010.5667851
Publikováno v:
Journal of Mechanical Science & Technology; Mar2022, Vol. 36 Issue 3, p1599-1606, 8p
Autor:
Jayez, David, Jock, Kevin, Yue Zhou, Govindarajulu, Venugopal, Zhen Zhang, Anis, Fatima, Tijiwa-Birk, Felipe, AgarwaL, Shivam
Publikováno v:
Proceedings of SPIE; 2018, Vol. 10585, p1-7, 7p
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT); 2014, p1-4, 4p
Publikováno v:
Journal of Materials Chemistry C; 2013, Vol. 1 Issue 35, p5454-5462, 9p
Autor:
Dhere, Neelkanth G.
Publikováno v:
AIP Conference Proceedings; Mar1997, Vol. 401 Issue 1, p423-442, 20p
Autor:
Au Khakifirooz, Dimitri A. Antoniadis
Publikováno v:
IEEE Transactions on Electron Devices; Jun2008, Vol. 55 Issue 6, p1401-1408, 8p
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics; May/Jun2000, Vol. 6 Issue 3, p534-543, 10p